Title:
HIGH-FREQUENCY HIGH-Q-VALUE ACOUSTIC RESONATOR AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2023/108590
Kind Code:
A1
Abstract:
The present application discloses a high-frequency high-Q-value acoustic resonator and a manufacturing method therefor. The acoustic resonator comprises: a substrate; a release layer provided on the surface of one side of the substrate; a piezoelectric layer provided on the surface of the release layer facing away from the substrate; and a plurality of metal electrodes provided on the surface of the piezoelectric layer facing away from the release layer, wherein the release layer is used for release between the piezoelectric layer and the substrate, and when the release layer is released, an etching trench is formed between the substrate and the piezoelectric layer, so as to obtain the high-frequency high-Q-value acoustic resonator in an S1 vibration mode at a range of -40 to +40 degrees of an x-cut piezoelectric thin film. According to the present solution, the S1 vibration mode is excited on the x-cut piezoelectric thin film, and a high-frequency high-Q-value acoustic resonator having a quality factor (Q) of exceeding 5000 or even tens of thousands is achieved at a specific angle (-40 to +40 degrees), so that the performance requirements of high frequencies and high Q values of filters in current 5G and 6G frequency bands are met.
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Inventors:
ZUO CHENGJIE (CN)
DAI ZHONGBIN (CN)
LIU XUEYAN (CN)
DAI ZHONGBIN (CN)
LIU XUEYAN (CN)
Application Number:
PCT/CN2021/139013
Publication Date:
June 22, 2023
Filing Date:
December 17, 2021
Export Citation:
Assignee:
UNIV SCIENCE & TECHNOLOGY CHINA (CN)
International Classes:
H03H9/17; H03H3/04
Foreign References:
| US20210234528A1 | 2021-07-29 | |||
| CN103378815A | 2013-10-30 | |||
| US20200177162A1 | 2020-06-04 | |||
| US20200028487A1 | 2020-01-23 | |||
| CN112039460A | 2020-12-04 |
Attorney, Agent or Firm:
UNITALEN ATTORNEYS AT LAW (CN)
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