Title:
HIGH-FREQUENCY SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2021/140563
Kind Code:
A1
Abstract:
This invention relates to a high-frequency semiconductor device. A problem of a conventional high-frequency semiconductor device provided with an input second-harmonic matching circuit has been a decrease in gain. The present invention provides a high-frequency semiconductor device (100) in which two adjacent unit transistor cells (7), (8) are connected to an input second-harmonic matching circuit (19) provided on an upper surface of a semiconductor substrate (1). The input second harmonic matching circuit (19) includes a first capacitor (13), a first inductor (14), a second capacitor (15), and a second inductor (16). The first capacitor (13) and the first inductor (14) resonate at the frequency of a fundamental wave, and the impedance estimated from input electrodes of the two unit transistor cells (7), (8) is a short at the frequency of a second harmonic.
Inventors:
WATANABE SHINSUKE (JP)
Application Number:
PCT/JP2020/000163
Publication Date:
July 15, 2021
Filing Date:
January 07, 2020
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H01L21/822; H01L21/8222; H01L21/8232; H01L21/8234; H01L27/04; H01L27/06; H03F1/02; H03F3/189; H03F3/68
Domestic Patent References:
| WO2017208328A1 | 2017-12-07 | |||
| WO2017203571A1 | 2017-11-30 |
Foreign References:
| JP2007060616A | 2007-03-08 | |||
| JPH0832376A | 1996-02-02 | |||
| JP2012109825A | 2012-06-07 | |||
| JP2004007616A | 2004-01-08 | |||
| JP2002064345A | 2002-02-28 | |||
| JP2005294740A | 2005-10-20 |
Attorney, Agent or Firm:
MURAKAMI, Kanako et al. (JP)
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