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Title:
HIGH-FREQUENCY SUBSTRATE AND PROCESS FOR PRODUCING THE SAME
Document Type and Number:
WIPO Patent Application WO/2007/069491
Kind Code:
A1
Abstract:
A technique by which a high-frequency substrate having excellent conductor adhesion can be obtained. The high-frequency substrate comprises a base material and a conductor adherent thereto, the base material comprising a polymer obtained by graft-polymerizing up to 1 wt.% monomer having an affinity for the conductor with a fluoropolymer. A film of a fluoropolymer is irradiated with electron beams or otherwise treated to form active sites reactive in graft polymerization. Thereafter, this fluoropolymer film is introduced into a solution of a monomer having an affinity for the conductor to conduct graft polymerization. The conductor is adhered to the graft polymer to produce the substrate. In the graft polymerization step, the degree of grafting of the monomer is regulated to 1 wt.% or lower based on the fluoropolymer.

Inventors:
TAMADA MASAO (JP)
SEKO NORIAKI (JP)
SAKATA EIJI (JP)
ITOH NAOKI (JP)
Application Number:
PCT/JP2006/324197
Publication Date:
June 21, 2007
Filing Date:
December 05, 2006
Export Citation:
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Assignee:
JAPAN ATOMIC ENERGY AGENCY (JP)
HITACHI MAXELL (JP)
TAMADA MASAO (JP)
SEKO NORIAKI (JP)
SAKATA EIJI (JP)
ITOH NAOKI (JP)
International Classes:
H05K1/03; C08J7/00; C08J7/06; H01L23/12; H01L23/14
Foreign References:
JP2001007466A2001-01-12
JPS6372732A1988-04-02
JP2005275173A2005-10-06
JP2001007609A2001-01-12
JPH10226728A1998-08-25
JPH05243697A1993-09-21
JPH04370123A1992-12-22
JPH03281544A1991-12-12
Attorney, Agent or Firm:
TSUTSUI, Satoru (3-30-15 Hakataekimae, Hakata-k, Fukuoka-shi Fukuoka 11, JP)
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