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Patent Searching and Data


Title:
HIGH FREQUENCY SWITCH
Document Type and Number:
WIPO Patent Application WO/2019/008639
Kind Code:
A1
Abstract:
An NMOS transistor (105) electrically connects or disconnects a drain (102) and a source (101) by controlling the potential of a gate (103). A resistive element (109a) is connected between a high frequency grounding element (107) and a back gate (104) of the NMOS transistor (105). Between the back gate (104) and the high frequency grounding element (107), a first switch circuit (106a) is disposed in parallel to the resistive element (109a), and the back gate (104) and the high frequency grounding element (107) are short-circuited when the drain and the source are disconnected.

Inventors:
FUJIWARA, Takanobu (7-3 Marunouchi 2-chome, Chiyoda-k, Tokyo 10, 〒1008310, JP)
SHIMOZAWA, Mitsuhiro (7-3 Marunouchi 2-chome, Chiyoda-k, Tokyo 10, 〒1008310, JP)
Application Number:
JP2017/024359
Publication Date:
January 10, 2019
Filing Date:
July 03, 2017
Export Citation:
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Assignee:
MITSUBISHI ELECTRIC CORPORATION (7-3 Marunouchi 2-chome, Chiyoda-ku Tokyo, 10, 〒1008310, JP)
International Classes:
H03K17/687
Attorney, Agent or Firm:
TAZAWA, Hideaki et al. (Akasaka Sanno Center Bldg. 5F, 12-4 Nagata-cho 2-chome, Chiyoda-k, Tokyo 14, 〒1000014, JP)
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