Title:
HIGH INDIUM UPTAKE AND HIGH POLARIZATION RATIO FOR GROUP-III NITRIDE OPTOELECTRONIC DEVICES FABRICATED ON A SEMIPOLAR (20-2-1) PLANE OF A GALLIUM NITRIDE SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2012/149531
Kind Code:
A3
Abstract:
A Group-Ill nitride optoelectronic device fabricated on a semipolar (20-2-1) plane of a Gallium Nitride (GaN) substrate is characterized by a high Indium uptake and a high polarization ratio.
Inventors:
ZHAO YUJI (US)
TANAKA SHINICHI (US)
HUANG CHIA-YEN (US)
FEEZELL DANIEL F (US)
SPECK JAMES S (US)
DENBAARS STEVEN P (US)
NAKAMURA SHUJI (US)
TANAKA SHINICHI (US)
HUANG CHIA-YEN (US)
FEEZELL DANIEL F (US)
SPECK JAMES S (US)
DENBAARS STEVEN P (US)
NAKAMURA SHUJI (US)
Application Number:
PCT/US2012/035798
Publication Date:
May 08, 2014
Filing Date:
April 30, 2012
Export Citation:
Assignee:
UNIV CALIFORNIA (US)
ZHAO YUJI (US)
TANAKA SHINICHI (US)
HUANG CHIA-YEN (US)
FEEZELL DANIEL F (US)
SPECK JAMES S (US)
DENBAARS STEVEN P (US)
NAKAMURA SHUJI (US)
ZHAO YUJI (US)
TANAKA SHINICHI (US)
HUANG CHIA-YEN (US)
FEEZELL DANIEL F (US)
SPECK JAMES S (US)
DENBAARS STEVEN P (US)
NAKAMURA SHUJI (US)
International Classes:
H01L33/02
Foreign References:
| US20110076788A1 | 2011-03-31 | |||
| US20110176569A1 | 2011-07-21 | |||
| US20110186860A1 | 2011-08-04 | |||
| US7933303B2 | 2011-04-26 | |||
| US20110075695A1 | 2011-03-31 | |||
| US20090212277A1 | 2009-08-27 |
Other References:
See also references of EP 2702618A4
Attorney, Agent or Firm:
GATES, George H. (Suite 1050Los Angeles, California, US)
Download PDF:
Previous Patent: MUFFLER ASSEMBLY AND PROCESS OF MANUFACTURE
Next Patent: LIGHTWEIGHT POLYMERIC EXHAUST COMPONENTS
Next Patent: LIGHTWEIGHT POLYMERIC EXHAUST COMPONENTS