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Title:
HIGH-LINEARITY RADIO FREQUENCY SWITCH CIRCUIT, CHIP AND ELECTRONIC DEVICE HAVING SAME
Document Type and Number:
WIPO Patent Application WO/2024/017222
Kind Code:
A1
Abstract:
A high-linearity radio frequency switch circuit, a chip and an electronic device having same, which can relieve the nonlinear problem of radio frequency switch circuits, and improve the withstand power and the voltage withstanding capability of same. The radio frequency switch circuit consists of multiple stages of switching transistor units connected in series, wherein of each switching transistor (Mi), a gate is connected to a corresponding gate bias resistor (RAi), a drain and a source are separately connected to a corresponding via resistor (Rdsi), and a body is connected to a corresponding body bias resistor (RBi); the gate bias resistor (RAi) and the body bias resistor (RBi) in a switching transistor unit of each stage are connected in series; mirror resistors (Rci) are successively connected in series to form a mirror resistor chain; and the body of each switching transistor (Mi) is connected to an intermediate wiring end (C1) of a corresponding dynamic adjustment unit (DAi), and a first side wiring end (C2) and a second side wiring end (C3) of each dynamic adjustment unit (DAi) are respectively connected across to two ends in symmetric correspondence of at least one series resistor in the mirror resistor chain.

Inventors:
WANG FENG (CN)
LI YANLI (CN)
Application Number:
PCT/CN2023/107822
Publication Date:
January 25, 2024
Filing Date:
July 18, 2023
Export Citation:
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Assignee:
SHANGHAI VANCHIP TECH CO LTD (CN)
International Classes:
H03K17/687; H03K17/10
Foreign References:
CN114629479A2022-06-14
CN115395936A2022-11-25
CN102474251A2012-05-23
CN103986449A2014-08-13
CN110719092A2020-01-21
CN111800112A2020-10-20
US10447344B22019-10-15
US10715133B12020-07-14
US20140242760A12014-08-28
US20220038097A12022-02-03
Attorney, Agent or Firm:
BEIJING GENIUS ESSEN INTELLECTUAL PROPERTY OFFICE (CN)
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