HIGH MELTING POINT METALLIC SILICIDE TARGET AND METHOD FOR PRODUCING THE SAME, HIGH MELTING POINT METALLIC SILICIDE FILM AND SEMICONDUCTOR DEVICE

WIPO Patent Application WO/1995/004167

A1

A high melting point metallic silicide target according to the present invention has a fine mixed system comprising MSi2 particles (here, M denoting high melting point metal) and Si particles and is characterized in that the number of MSi2 particles independently existing in a cross-sectional area of 0.01 mm2 of the mixed system is equal to or less than 15, that the average grain size of the MSi2 particles is equal to or less than 10 mum, and the maximum grain size of free Si particles existing between MSi2 particles is equal to or less than 20 mum. The target has a fine mixed system, high density and uniform constituents, and is highly pure with little impurities such as oxygen being contained. By using this target it is possible to reduce variation in film resistance in the surface of particles and/or wafers and film impurities which are generated during sputtering, thereby making it possible to improve the yield in production of semiconductor devices and reliability of the devices so produced.

SATO MICHIO (JP)
YAMANOBE TAKASHI (JP)
KOMATSU TOHRU (JP)
FUKASAWA YOSHIHARU (JP)
YAGI NORIAKI (JP)
MAKI TOSHIHIRO (JP)
SHIZU HIROMI (JP)

PCT/JP1994/001236

February 09, 1995

July 27, 1994

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TOSHIBA KK (JP)
SATO MICHIO (JP)
YAMANOBE TAKASHI (JP)
KOMATSU TOHRU (JP)
FUKASAWA YOSHIHARU (JP)
YAGI NORIAKI (JP)
MAKI TOSHIHIRO (JP)
SHIZU HIROMI (JP)

C23C14/34; (IPC1-7): C23C14/34

JPH03130360A	1991-06-04
JPH0247261A	1990-02-16
JPH0219961B2	1990-05-07
JPS61179534A	1986-08-12
JPH0428864A	1992-01-31

See also references of EP 0666336A4

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