Title:
HIGH-MOBILITY BULK SILICON PFET
Document Type and Number:
WIPO Patent Application WO2006034189
Kind Code:
A3
Abstract:
A field effect transistor (100) and method of fabricating the field effect transistor. The field effect transistor, including: a gate electrode (165) formed on a top surface (170) of a gate dielectric layer (155), the gate dielectric layer on a top surface (160) of a single-crystal silicon channel region (110), the single-crystal silicon channel region on a top surface of a Ge including layer (135), the Ge including layer on a top surface of a single-crystal silicon substrate (150), the Ge including layer between a first dielectric layer (215A) and a second dielectric layer (215B) on the top surface of the single-crystal silicon substrate.
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Inventors:
ANDERSON BRENT A (US)
LANZEROTTI LOUIS D (US)
NOWAK EDWARD J (US)
LANZEROTTI LOUIS D (US)
NOWAK EDWARD J (US)
Application Number:
PCT/US2005/033472
Publication Date:
May 04, 2006
Filing Date:
September 19, 2005
Export Citation:
Assignee:
IBM (US)
ANDERSON BRENT A (US)
LANZEROTTI LOUIS D (US)
NOWAK EDWARD J (US)
ANDERSON BRENT A (US)
LANZEROTTI LOUIS D (US)
NOWAK EDWARD J (US)
International Classes:
H01L21/32; H01L29/737; H01L21/3213; H01L21/324; H01L29/739; H01L29/76
Foreign References:
| US20010045604A1 | 2001-11-29 |
Other References:
See also references of EP 1792346A4
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