Title:
HIGH-PERFORMANCE THERMOELECTRIC DEVICE AND ULTRA-FAST PREPARATION METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2019/090526
Kind Code:
A1
Abstract:
A high-performance thermoelectric device (1) and an ultra-fast preparation method therefor. In the high-performance thermoelectric device (1), segmented structures are used to optimally match a thermoelectric material and a temperature difference environment; barrier layers (102p, 104p, 106p, 108p, 102n, 104n, 106n, 108n) and stress buffer layers (103p, 107p. 103n,107n) are used to reduce interface element migration and longitudinal contact thermal expansion stress and to increase bonding strength; a phonon scattering layer (113a) and a negative thermal expansion buffer layer (113b) are used to fix thermoelectric legs (10p, 10n) in an embedded manner so as to increase the internal thermal resistance and the lateral thermal matching performance of the high-performance thermoelectric device (1); and an inner package (201) and an outer package (202) are used to avoid sublimation and oxidation of the thermoelectric material and enhance the external impact resistance of the thermoelectric device (1). Said high-performance thermoelectric device effectively breaks through the bottlenecks existing in traditional thermoelectric devices in the prior art, such as low energy conversion efficiency, low specific power, poor thermal stability, poor impact resistance and a complicated preparation process. Meanwhile, the thermoelectric stability and the mechanical structure performance of the high-performance thermoelectric device (1) are greatly improved, ensuring excellent electrical output performance for a long time and expanding the working environment.
Inventors:
HE JIAQING (CN)
ZHOU YI (CN)
FU LIANGWEI (CN)
CHEN YUEXING (CN)
FENG DAN (CN)
ZHOU YI (CN)
FU LIANGWEI (CN)
CHEN YUEXING (CN)
FENG DAN (CN)
Application Number:
PCT/CN2017/109980
Publication Date:
May 16, 2019
Filing Date:
November 08, 2017
Export Citation:
Assignee:
UNIV SOUTH SCIENCE & TECHNOLOGY CHINA (CN)
International Classes:
H01L35/32; H01L35/34
Domestic Patent References:
| WO2017082042A1 | 2017-05-18 |
Foreign References:
| CN105374927A | 2016-03-02 | |||
| CN101867010A | 2010-10-20 | |||
| CN102971879A | 2013-03-13 | |||
| CN103000798A | 2013-03-27 |
Attorney, Agent or Firm:
TSINGYIHUA INTELLECTUAL PROPERTY LLC (CN)
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