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Patent Searching and Data


Title:
HIGH-POWER PULSED MAGNETICALLY ENHANCED PLASMA PROCESSING
Document Type and Number:
WIPO Patent Application WO2004040615
Kind Code:
A3
Abstract:
A plasma processing apparatus according to the present invention includes an anode and a cathode. An ionization source generates a weakly-ionized plasma proximate to the cathode. A magnet is positioned to generate a magnetic field proximate to the weakly-ionized plasma. The magnetic field substantially traps electrons in the weakly-ionized plasma proximate to the cathode. A power supply produces an electric field in a gap between the anode and the cathode. The electric field generates excited atoms in the weakly-ionized plasma and generates secondary electrons from the cathode. The secondary electrons ionize the excited atoms, thereby creating a strongly-ionized plasma. A voltage supply applies a bias voltage to a substrate that is positioned proximate to the cathode that causes ions in the plurality of ions to impact a surface of the substrate in a manner that causes etching of the surface of the substrate.

Inventors:
CHISTYAKOV ROMAN (US)
Application Number:
US0334191W
Publication Date:
September 23, 2004
Filing Date:
October 28, 2003
Export Citation:
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Assignee:
ZOND, INC
CHISTYAKOV, ROMAN
International Classes:
H01J37/32; (IPC1-7): H01J37/32
Foreign References:
US4983253A1991-01-08
US5728261A1998-03-17
EP0428161A21991-05-22
Other References:
See also references of EP 1556882A2
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