Title:
HIGH-POWER PULSED MAGNETICALLY ENHANCED PLASMA PROCESSING
Document Type and Number:
WIPO Patent Application WO2004040615
Kind Code:
A3
Abstract:
A plasma processing apparatus according to the present invention includes an anode and a cathode. An ionization source generates a weakly-ionized plasma proximate to the cathode. A magnet is positioned to generate a magnetic field proximate to the weakly-ionized plasma. The magnetic field substantially traps electrons in the weakly-ionized plasma proximate to the cathode. A power supply produces an electric field in a gap between the anode and the cathode. The electric field generates excited atoms in the weakly-ionized plasma and generates secondary electrons from the cathode. The secondary electrons ionize the excited atoms, thereby creating a strongly-ionized plasma. A voltage supply applies a bias voltage to a substrate that is positioned proximate to the cathode that causes ions in the plurality of ions to impact a surface of the substrate in a manner that causes etching of the surface of the substrate.
Inventors:
CHISTYAKOV ROMAN (US)
Application Number:
PCT/US2003/034191
Publication Date:
September 23, 2004
Filing Date:
October 28, 2003
Export Citation:
Assignee:
ZOND INC (US)
CHISTYAKOV ROMAN (US)
CHISTYAKOV ROMAN (US)
International Classes:
H01J37/32; (IPC1-7): H01J37/32
Foreign References:
US4983253A | 1991-01-08 | |||
US5728261A | 1998-03-17 | |||
EP0428161A2 | 1991-05-22 |
Other References:
See also references of EP 1556882A2
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