Title:
HIGH POWER RF FIELD EFFECT TRANSISTOR SWITCHING USING DC BIASES
Document Type and Number:
WIPO Patent Application WO/2014/085140
Kind Code:
A3
Abstract:
Systems, methods, and apparatus are provided for tuning in wireless power transfer circuits. One aspect of the disclosure provides an apparatus for tuning. The apparatus includes a field effect transistor having a gate, source, and drain, where the field effect transistor is configured to electrically engage a tuning element to an AC power path. In some embodiments, one of the source or drain contacts is at an alternating current voltage.
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Inventors:
WHEELAND CODY BURTON (US)
IRISH LINDA STACEY (US)
VON NOVAK III WILLIAM HENRY (US)
MAYO GABRIEL ISSAC (US)
IRISH LINDA STACEY (US)
VON NOVAK III WILLIAM HENRY (US)
MAYO GABRIEL ISSAC (US)
Application Number:
PCT/US2013/070784
Publication Date:
December 18, 2014
Filing Date:
November 19, 2013
Export Citation:
Assignee:
QUALCOMM INC (US)
International Classes:
H02J5/00; H02J7/02
Foreign References:
| US20110278945A1 | 2011-11-17 | |||
| DE3916173A1 | 1990-11-22 | |||
| US20070109708A1 | 2007-05-17 | |||
| US20110090723A1 | 2011-04-21 | |||
| US20070018699A1 | 2007-01-25 |
Attorney, Agent or Firm:
ABUMERI, Mark M. (2040 Main Street Fourteenth Floo, Irvine California, US)
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