HIGH-PURITY HAFNIUM, TARGET AND THIN FILM COMPRISING HIGH-PURITY HAFNIUM, AND PROCESS FOR PRODUCING HIGH-PURITY HAFNIUM

Title:

HIGH-PURITY HAFNIUM, TARGET AND THIN FILM COMPRISING HIGH-PURITY HAFNIUM, AND PROCESS FOR PRODUCING HIGH-PURITY HAFNIUM

Document Type and Number:

WIPO Patent Application WO/2007/007498

Kind Code:

A1

Abstract:

[PROBLEMS] To provide: a process for producing high-purity hafnium from a hafnium sponge reduced in zirconium content as a raw material, the high-purity hafnium being reduced in the contents of Fe, Cr, and Ni impurities, contents of Ca, Na, and K impurities, contents of Al, Co, Cu, Ti, W, and Zn impurities, α-ray count, contents of U and Th impurities, contents of Pb and Bi impurities, and content of carbon as a gasifiable matter; an efficient and stable production technique; a high-purity hafnium material obtained by the technique; and a sputtering target and a gate insulator or thin film for metal gate use which each comprises the material. [MEANS FOR SOLVING PROBLEMS] The high-purity hafnium is characterized in that the purity of the hafnium excluding Zr and the gasifiable matter is 6N or higher and that the contents of Fe, Cr, and Ni each is 0.2 ppm or lower, the contents of Ca, Na, and K each is 0.1 ppm or lower, and the contents of Al, Co, Cu, Ti, W, and Zn each is 0.1 ppm or lower.

Inventors:

SHINDO YUICHIRO (JP)

Application Number:

PCT/JP2006/311722

Publication Date:

January 18, 2007

Filing Date:

June 12, 2006

Export Citation:

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Assignee:

NIPPON MINING CO (JP)
SHINDO YUICHIRO (JP)

International Classes:

B22D27/02; C22B34/14; C22B9/22; C22C28/00; C23C14/34

Foreign References:

EP1329526A1	2003-07-23
EP0442752A1	1991-08-21
JPH07316681A	1995-12-05
JP2006037133A	2006-02-09
JPS6017027A	1985-01-28
JPS61279641A	1986-12-10
JPS62103328A	1987-05-13
JPH03501630A	1991-04-11
JPH10204554A	1998-08-04
JPS60255621A	1985-12-17
JPS61242993A	1986-10-29

Other References: