HIGH PURITY ZIRCONIUM OR HAFNIUM, SPUTTERING TARGET COMPRISING THE HIGH PURITY ZIRCONIUM OR HAFNIUM AND THIN FILM FORMED USING THE TARGET, AND METHOD FOR PRODUCING HIGH PURITY ZIRCONIUM OR HAFNIUM AND METHOD FOR PRODUCING POWDER OF HIGH PURITY ZIRCONIUM OR HAFNIUM

Title:

Document Type and Number:

WIPO Patent Application WO/2002/029125

Kind Code:

A1

Abstract:

A high purity zirconium or hafnium which is extremely reduced in the contents of an alkali metal such as Na or K, a radioactive element such as U or Th, a transition metal or heavy metal or high melting point metal such as Fe, Ni, Co, Cr, Cu, Mo, Ta or V, and a gas forming element such as C or O; and a method for producing a high purity zirconium or hafnium which allows the production thereof at a low cost; and a method for producing a powder of high purity zirconium or hafnium with safety and at a low cost which comprises using a hydrogenated high purity zirconium or hafnium as a material. The high purity zirconium or hafnium is greatly reduced in the contents of impurities which are obstacles to assurance of operational functions of a semiconductor.

Inventors:

SHINDO YUICHIRO (JP)

Application Number:

PCT/JP2001/005612

Publication Date:

April 11, 2002

Filing Date:

June 29, 2001

Export Citation:

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Assignee:

NIKKO MATERIALS CO LTD (JP)
SHINDO YUICHIRO (JP)

International Classes:

B22F9/02; C22B9/22; C22B34/14; C22C1/04; C22C16/00; C22C27/00; C23C14/34; H01L21/28; H01L23/532; H01L29/51; (IPC1-7): C22B34/14; C22B9/22; B22F9/04; C23C14/34

Foreign References:

EP0442752A1	1991-08-21
JPH04350105A	1992-12-04
JPS526245A	1977-01-18
JPH02310331A	1990-12-26

Other References: