Title:
HIGH-QUALITY HEXAGONAL BORON-NITRIDE NANOSHEET USING A MULTI-COMPONENT LOW EUTECTIC TEMPERATURE SYSTEM
Document Type and Number:
WIPO Patent Application WO/2012/115348
Kind Code:
A3
Abstract:
The present invention relates to a method for preparing a hexagonal boron-nitride nanosheet, enablingwhich enables high-quality hexagonal boron nitride nanosheets to be mass-produced at a low temperature through a stable process. The method for preparing a hexagonal boron-nitride nanosheet comprises the steps of: (a) obtaining alkali metal ions or alkaline earth metal ions from a salt mixture including at least two kinds of alkali metal salts or alkaline earth metal salts; (b) inserting the alkali metal ions or alkaline earth metal ions into an interlayer region of hexagonal boron nitride to form a hexagonal boron-nitride interlayer compound; and (c) removing the alkali metal ions or alkaline earth metal ions from the hexagonal boron nitride interlayer compound so as to obtain a hexagonal boron-nitride nanosheet.
Inventors:
JEON SEOK-WOO (KR)
HONG SOON-HYUNG (KR)
LEE DONG-JU (KR)
PARK KWANG-HYUN (KR)
HONG SOON-HYUNG (KR)
LEE DONG-JU (KR)
PARK KWANG-HYUN (KR)
Application Number:
PCT/KR2012/000209
Publication Date:
October 18, 2012
Filing Date:
January 09, 2012
Export Citation:
Assignee:
KOREA ADVANCED INST SCI & TECH (KR)
JEON SEOK-WOO (KR)
HONG SOON-HYUNG (KR)
LEE DONG-JU (KR)
PARK KWANG-HYUN (KR)
JEON SEOK-WOO (KR)
HONG SOON-HYUNG (KR)
LEE DONG-JU (KR)
PARK KWANG-HYUN (KR)
International Classes:
C01B35/08; B82B3/00; C04B35/58
Foreign References:
| US20020076557A1 | 2002-06-20 | |||
| US5028650A | 1991-07-02 | |||
| US4562050A | 1985-12-31 | |||
| US4045186A | 1977-08-30 |
Attorney, Agent or Firm:
SONG, Kyeong-Keun et al. (1621-25 Seocho-dong,,Seocho-gu, Seoul 137-878, KR)
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Claims: