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Patent Searching and Data


Title:
HIGH RATE DEPOSITION OF THIN FILMS WITH IMPROVED BARRIER LAYER PROPERTIES
Document Type and Number:
WIPO Patent Application WO/2010/065966
Kind Code:
A3
Abstract:
An atomic layer deposition (ALD) method is utilized to deposit a thin film barrier layer (100) of a metal oxide, such as titanium dioxide, onto a substrate (110). Excellent barrier layer properties can be achieved when the titanium oxide barrier is deposited by ALD at temperatures below approximately 100°C. Barriers less than 100 angstroms thick and having a water vapor transmission rate of less than approximately 0.01 grams/m2/day are disclosed, as are methods of manufacturing such barriers.

Inventors:
DICKEY ERIC R (US)
BARROW WILLIAM (US)
Application Number:
PCT/US2009/067024
Publication Date:
October 14, 2010
Filing Date:
December 07, 2009
Export Citation:
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Assignee:
LOTUS APPLIED TECHNOLOGY LLC (US)
DICKEY ERIC R (US)
BARROW WILLIAM (US)
International Classes:
C23C16/40; C23C16/00; H01L21/205
Foreign References:
KR100691168B12007-03-09
Other References:
GRONER, M. D. ET AL.: "Gas diffusion barriers on polymers using A1203 atomic layer deposition", APPLIED PHYSICS LETTERS, vol. 88, no. 5, 31 January 2006 (2006-01-31), XP012082619
CARCIA, P. F. ET AL.: "Ca test of A1203 gas diffusion barriers grown by atomic layer deposition on polymers", APPLIED PHYSICS LETTERS, vol. 89, no. 3, 19 July 2006 (2006-07-19), XP012087979
SHIN, H. ET AL.: "Formation of Ti02 and Zr02 nanotubes using atomic layer deposition with ultraprecise control of the wall thickness", ADVANCED MATERIALS, vol. 16, no. 14, 5 July 2004 (2004-07-05), pages 1197 - 1200, XP008147980
Attorney, Agent or Firm:
FERRIS, Kassim (LLP900 SW Fifth Avenue,Suite 260, Portland Oregon, US)
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