Title:
HIGH SPEED MEMORY MODULES
Document Type and Number:
WIPO Patent Application WO2006011974
Kind Code:
A3
Abstract:
Apparatus and method for producing memory modules having a plurality of branches connected to a memory bus, each branch containing at least one dynamic random access memory (DRAM) device or synchronous random access memory (SDRAM) device connected to the memory bus via at least one transmission signal (TS) line and/or at least one sub-transmission signal (STS) line. The memory modules include at least one branch containing a resistor connected to the TS line or STS line and connected series with the DRAM device or SDRAM device and connected to the memory bus. A computing system implementing the memory modules is also discussed.
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Inventors:
CHANG GE (US)
Application Number:
PCT/US2005/020653
Publication Date:
March 16, 2006
Filing Date:
June 09, 2005
Export Citation:
Assignee:
INTEL CORP (US)
CHANG GE (US)
CHANG GE (US)
International Classes:
G06F13/40; G06F12/00
Domestic Patent References:
| WO1997015012A1 | 1997-04-24 |
Foreign References:
| US20040019758A1 | 2004-01-29 | |||
| EP1306849A2 | 2003-05-02 | |||
| US20030161196A1 | 2003-08-28 | |||
| EP0818734A2 | 1998-01-14 | |||
| US5821767A | 1998-10-13 | |||
| EP1383052A1 | 2004-01-21 | |||
| US20040071040A1 | 2004-04-15 | |||
| US6266252B1 | 2001-07-24 | |||
| EP1262877A2 | 2002-12-04 |
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