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Title:
HIGH SPUTTER, ETCH RESISTANT WINDOW FOR PLASMA PROCESSING CHAMBERS
Document Type and Number:
WIPO Patent Application WO1999067808
Kind Code:
A9
Abstract:
A window of a plasma processing chamber. The window includes a first dielectric portion having a first electrical thickness and a first resistivity to an etching plasma that is formed within the plasma processing chamber. There is further included a second dielectric portion disposed within the first dielectric portion. The second dielectric portion has a second electrical thickness that is less than the first electrical thickness. The second dielectric portion is formed of a substantially transparent material and has a second resistivity to the etching plasma. The second resistivity is higher than the first resistivity.

Inventors:
HOWALD ARTHUR M
CHEN ANTHONY L
SCHOEPP ALAN M
Application Number:
PCT/US1999/014069
Publication Date:
November 02, 2000
Filing Date:
June 22, 1999
Export Citation:
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Assignee:
LAM RES CORP (US)
International Classes:
H05H1/46; H01J37/32; H01L21/302; H01L21/3065; (IPC1-7): H01J37/32
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