Title:
HIGH-TEMPERATURE SELECTIVE DRY ETCH HAVING REDUCED POST-ETCH SOLID RESIDUE
Document Type and Number:
WIPO Patent Application WO/2011/139435
Kind Code:
A3
Abstract:
Methods of dry etching silicon-containing dielectric films are described. The methods include maintaining a relatively high temperature of the dielectric films while etching in order to achieve reduced solid residue on the etched surface. Partially or completely avoiding the accumulation of solid residue increases the etch rate.
Inventors:
THADANI KIRAN V (US)
TANG JING (US)
INGLE NITIN (US)
YANG DONGQING (US)
TANG JING (US)
INGLE NITIN (US)
YANG DONGQING (US)
Application Number:
PCT/US2011/030582
Publication Date:
January 26, 2012
Filing Date:
March 30, 2011
Export Citation:
Assignee:
APPLIED MATERIALS INC (US)
THADANI KIRAN V (US)
TANG JING (US)
INGLE NITIN (US)
YANG DONGQING (US)
THADANI KIRAN V (US)
TANG JING (US)
INGLE NITIN (US)
YANG DONGQING (US)
International Classes:
H01L21/3065
Foreign References:
| US5786276A | 1998-07-28 | |||
| US20090275206A1 | 2009-11-05 | |||
| US5849639A | 1998-12-15 | |||
| US20050266691A1 | 2005-12-01 |
Attorney, Agent or Firm:
SHAFFER, William L. et al. (Two Embarcardero Center 8th Floo, San Francisco California, US)
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