Title:
HIGH-THROUGHPUT CONTINUOUS GAS-PHASE SYNTHESIS OF NANOWIRES WITH TUNABLE PROPERTIES
Document Type and Number:
WIPO Patent Application WO/2013/114218
Kind Code:
A3
Abstract:
A method for forming wires, including providing catalytic seed particles suspended in a gas, providing gaseous precursors that comprise constituents of the wires to be formed and growing the wires from the catalytic seed particles. The wires may be grown in a temperature range between 425 and 525 C and may have a pure zincblende structure. The wires may be III-V semiconductor nanowires having a Group V terminated surface and a <111>B crystal growth direction.
Inventors:
HEURLIN MAGNUS (SE)
MAGNUSSON MARTIN H (SE)
DEPPERT KNUT (SE)
SAMUELSON LARS (US)
MAGNUSSON MARTIN H (SE)
DEPPERT KNUT (SE)
SAMUELSON LARS (US)
Application Number:
PCT/IB2013/000626
Publication Date:
January 30, 2014
Filing Date:
February 01, 2013
Export Citation:
Assignee:
QUNANO AB (SE)
International Classes:
C30B25/00; B82Y40/00; H01L21/02; H01L29/06
Domestic Patent References:
| WO2011142717A1 | 2011-11-17 | |||
| WO2011078780A1 | 2011-06-30 |
Foreign References:
| US20090053126A1 | 2009-02-26 |
Other References:
KIM ET AL.: "Understanding ion-mobility and transport properties of aerosol nanowires", JOURNAL OF AEROSOL SCIENCE, vol. 28, no. 8, 2007, pages 823 - 842, XP022208061
DICK ET AL.: "Growth of GaP nanotree structures by sequential seeding of 1 D nanowires", JOURNAL OF CRYSTAL GROWTH, vol. 272, no. 1-4, 2004, pages 131 - 137, XP004658462
See also references of EP 2809837A4
DICK ET AL.: "Growth of GaP nanotree structures by sequential seeding of 1 D nanowires", JOURNAL OF CRYSTAL GROWTH, vol. 272, no. 1-4, 2004, pages 131 - 137, XP004658462
See also references of EP 2809837A4
Attorney, Agent or Firm:
BRANN AB (S- Stockholm, SE)
Download PDF: