Title:
A HIGH VACUUM IN-SITU REFINING METHOD FOR HIGH-PURITY MATERIALS AND A APPARATUS THEREOF
Document Type and Number:
WIPO Patent Application WO/2007/036094
Kind Code:
A1
Abstract:
The present invention concerns a high vacuum in-situ refining method for high-purity and
superhigh-purity materials and the apparatus thereof, characterised in heating
the upper part and lower part of crucible separately using double-heating-wires diffusion
furnace under vacuum, thereby forming the temperature profile which is high
at upper part and low at lower part of the crucible, or in reverse during different
stages; then heating the crucible in two steps to remove impurities with high
satn. vapour pressure and low satn. vapour pressure respectively in efficiency;
and obtaining high-purity materials eventually. The whole procedure is isolated
from atmosphere, reducing contamination upon stuff remarkably. The present
invention could provide products with high-quality and high production capacity,
which are stable in performance, therefore is reliable and free from contamination.
The present invention is appropriate for manufacture of high-purity and superhigh-purity
materials, particularly for manufacture of high-activity high-purity materials.
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Inventors:
DU XIAOLONG (CN)
ZENG ZHAOQUAN (CN)
YUAN HONGTAO (CN)
LI HANDONG (CN)
XUE QIKUN (CN)
JIA JINFENG (CN)
ZENG ZHAOQUAN (CN)
YUAN HONGTAO (CN)
LI HANDONG (CN)
XUE QIKUN (CN)
JIA JINFENG (CN)
Application Number:
PCT/CN2006/000645
Publication Date:
April 05, 2007
Filing Date:
April 11, 2006
Export Citation:
Assignee:
CHINESE ACAD PHYSICS INST (CN)
DU XIAOLONG (CN)
ZENG ZHAOQUAN (CN)
YUAN HONGTAO (CN)
LI HANDONG (CN)
XUE QIKUN (CN)
JIA JINFENG (CN)
DU XIAOLONG (CN)
ZENG ZHAOQUAN (CN)
YUAN HONGTAO (CN)
LI HANDONG (CN)
XUE QIKUN (CN)
JIA JINFENG (CN)
International Classes:
C22B9/02; C22B9/04
Foreign References:
| CN1184857A | 1998-06-17 | |||
| JP2002212647A | 2002-07-31 | |||
| JP2003213344A | 2003-07-30 | |||
| US20030145683A1 | 2003-08-07 |
Attorney, Agent or Firm:
KANGXIN PARTNERS, P.C. (Tower A InDo Building, A48 Zhichun Roa, Haidian District Beijing 8, CN)
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