Title:
HIGH VOLTAGE DEVICE WITH MULTI-ELECTRODE CONTROL
Document Type and Number:
WIPO Patent Application WO/2016/209934
Kind Code:
A8
Abstract:
In described examples, a high-voltage transistor (HVT) structure (140) adapts a low-voltage transistor (LVT) (110) to high-voltage environments. The HVT structure (140) includes a drain node (152), a source node (154), a control gate (156) and a field electrode (162, 164). The drain node (152) and the source node (154) define a conductive channel (163, 165), in which mobilized charges are regulated by the control gate (156). While being isolated from the control gate (156), the field electrode (162, 164) is configured to spread the mobilized charges in response to a field voltage. The field electrode (162, 164) is structured and routed to prevent charge sharing with any one of the drain node (152), source node (154) or control gate (156). Advantageously, the isolated field electrode (162, 164) minimizes the capacitance of the control gate (156) and the drain and source nodes (152, 154), such that the HVT (140) can switch with less power loss and a more robust performance in a high-voltage environment.
More Like This:
Inventors:
BAHL SANDEEP R (US)
SEEMAN MICHAEL D (US)
SEEMAN MICHAEL D (US)
Application Number:
PCT/US2016/038727
Publication Date:
March 01, 2018
Filing Date:
June 22, 2016
Export Citation:
Assignee:
TEXAS INSTRUMENTS INC (US)
TEXAS INSTRUMENTS JAPAN LTD (JP)
TEXAS INSTRUMENTS JAPAN LTD (JP)
International Classes:
H01L27/098; H01L29/778
Attorney, Agent or Firm:
DAVIS, Michael, A. et al. (US)
Download PDF: