Title:
HIGH-VOLTAGE INTEGRATED CIRCUIT
Document Type and Number:
WIPO Patent Application WO/2013/118959
Kind Code:
A1
Abstract:
The present invention relates to a high-voltage integrated circuit, including: a high-voltage enable signal generating unit for generating a high-voltage enable signal (VENHB) by dividing an input voltage (VIN) via a resistor (R2), which controls a bias current, and a voltage-dropping unit, when an external enable signal (Ext EN) turns on an n-type MOS transistor (NM1); and a low-voltage enable signal generating unit for generating a low-voltage enable signal (VENL) by driving a buffer unit using a voltage limited by a Zener diode via a resistor (R5), which controls a bias current, and a first current mirror, when the external enable signal (Ext EN) turns on an n-type MOS transistor (NM2).
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| WO/1999/027537 | ON CHIP VOLTAGE GENERATION FOR LOW POWER INTEGRATED CIRCUITS |
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Inventors:
PARK HYUN (KR)
CHANG KEESEOK (KR)
CHANG KEESEOK (KR)
Application Number:
PCT/KR2012/009626
Publication Date:
August 15, 2013
Filing Date:
November 15, 2012
Export Citation:
Assignee:
TAEJIN TECHNOLOGY CO LTD (KR)
International Classes:
G05F3/02; G05F3/24
Foreign References:
| KR20090062551A | 2009-06-17 | |||
| KR20030010350A | 2003-02-05 | |||
| US20110096572A1 | 2011-04-28 | |||
| KR100828257B1 | 2008-05-07 |
Attorney, Agent or Firm:
JEONG, Hwoihwan (KR)
정회환 (KR)
정회환 (KR)
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Claims:
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