HIGH VOLTAGE POWER MOSFET HAVING LOW ON-RESISTANCE

Title:

HIGH VOLTAGE POWER MOSFET HAVING LOW ON-RESISTANCE

Document Type and Number:

WIPO Patent Application WO2003071585

Kind Code:

A3

Abstract:

A power MOSFET is provided that includes a substrate (2) of a first conductivity type. An epitaxial layer (1) also of the first conductivity type is deposited on the substrate (2). First and second body regions (5, 6) are located in the epitaxial layer (1) and define a drift region between them The body regions have a second conductivity type. First and second source regions (7, 8) of the first conductivity type are respectively located in the first and second body regions (5, 6). A plurality of trenches are located below the body regions in the drift region of the epitaxial layer. The trenches, which extend toward the substrate from the first and second body regions, are filled with a thin oxide layer and a polycrystalline semiconductor material, e.g., polysilicon, that includes a dopant of the second conductivity type. The thin oxide layer is dissolved into the epitaxial layer, dopant is diffused from the trenches into portions of the epitaxial layer adjacent to the trenches, and the polycrystalline semiconductor material is converted to a single crystal material, thus forming the p-type doped regions that cause the reverse voltage to be built up in the horizontal direction as well as the vertical direction.

Inventors:

BLANCHARD RICHARD A

Application Number:

PCT/US2003/005211

Publication Date:

November 06, 2003

Filing Date:

February 20, 2003

Export Citation:

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Assignee:

GEN SEMICONDUCTOR INC (US)

International Classes:

H01L21/336; H01L21/66; H01L29/06; H01L29/78; H01L21/225; (IPC1-7): H01L21/336; H01L21/332; H01L29/76

Foreign References:

US6534836B1	2003-03-18
US6184555B1	2001-02-06
US6452230B1	2002-09-17
US5216275A	1993-06-01

Other References: