Title:
HUMIDITY SENSOR AND METHOD FOR PRODUCING SAME
Document Type and Number:
WIPO Patent Application WO/2018/088019
Kind Code:
A1
Abstract:
This humidity sensor comprises: a semiconductor substrate 2 that has a hollow part 2a; a heater 3 that is arranged on the semiconductor substrate 2; an even heat layer 5 that is arranged above the heater 3 and has a heat conductivity equal to or higher than the heat conductivity of the heater 3; and an insulating layer 12a that is arranged between the heater 3 and the even heat layer 5. In addition, the heater 3 and the even heat layer 5 are arranged in an insulating film region above the hollow part 2a; and the even heat layer 5 is arranged so as to overlap the heater 3 when viewed in plan.
More Like This:
Inventors:
SAKUMA NORIYUKI (JP)
NAKANO HIROSHI (JP)
ONOSE YASUO (JP)
OHTA KAZUHIRO (JP)
NAKANO HIROSHI (JP)
ONOSE YASUO (JP)
OHTA KAZUHIRO (JP)
Application Number:
PCT/JP2017/032773
Publication Date:
May 17, 2018
Filing Date:
September 12, 2017
Export Citation:
Assignee:
HITACHI AUTOMOTIVE SYSTEMS LTD (JP)
International Classes:
G01N25/62; G01N25/18; G01N27/18
Foreign References:
| JPH11251104A | 1999-09-17 | |||
| JP2011137679A | 2011-07-14 |
Attorney, Agent or Firm:
TSUTSUI & ASSOCIATES (JP)
Download PDF:
Previous Patent: SCHOTTKY BARRIER DIODE AND ELECTRONIC CIRCUIT PROVIDED WITH SAME
Next Patent: METHOD FOR PRODUCING SILICON MATERIAL
Next Patent: METHOD FOR PRODUCING SILICON MATERIAL