HYBRID BONDING USING DUMMY BONDING CONTACTS AND DUMMY INTERCONNECTS

Title:

HYBRID BONDING USING DUMMY BONDING CONTACTS AND DUMMY INTERCONNECTS

Document Type and Number:

WIPO Patent Application WO/2020/154954

Kind Code:

A1

Abstract:

Embodiments of bonded semiconductor structures and fabrication methods thereof are disclosed. In an example, a semiconductor device includes a first and a second semiconductor structures. The first semiconductor structure includes a first interconnect layer including first interconnects. At least one first interconnect is a first dummy interconnect. The first semiconductor structure further includes a first bonding layer including first bonding contacts. Each first interconnect is in contact with a respective first bonding contact. The second semiconductor structure includes a second interconnect layer including second interconnects. At least one second interconnect is a second dummy interconnect. The second semiconductor structure further includes a second bonding layer including second bonding contacts. Each second interconnect is in contact with a respective second bonding contact. The semiconductor device further includes a bonding interface between the first and second bonding layers. Each first bonding contact is in contact with a respective second bonding contact at the bonding interface.

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Inventors:

WANG TAO (CN)
HU SI PING (CN)
WANG JIA WEN (CN)
HUANG SHI QI (CN)
ZHU JIFENG (CN)
CHEN JUN (CN)
HUA ZI QUN (CN)

Application Number:

PCT/CN2019/073909

Publication Date:

August 06, 2020

Filing Date:

January 30, 2019

Export Citation:

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Assignee:

YANGTZE MEMORY TECH CO LTD (CN)

International Classes:

H01L23/485

Foreign References:

CN109219885A	2019-01-15
US20160086869A1	2016-03-24
US20180240859A1	2018-08-23

Other References: