Title:
HYBRID BURIED POWER RAIL STRUCTURE WITH DUAL FRONT SIDE AND BACKSIDE PROCESSING
Document Type and Number:
WIPO Patent Application WO/2024/002268
Kind Code:
A1
Abstract:
A semiconductor device (100) includes a semiconductor substrate (110) having a top surface (115) and a bottom surface (125). An electronic device is integrated into the top surface (115) of the semiconductor substrate (110). A conductive power rail (150) is positioned intermediate the top surface (115) and the bottom surface (125) of the semiconductor substrate (110). The conductive power rail (150) is configured to conduct power to the electronic device.
Inventors:
LANZILLO NICHOLAS (US)
SHOBHA HOSADURGA (US)
HUANG HUAI (US)
XIE RUILONG (US)
CLEVENGER LAWRENCE (US)
SHOBHA HOSADURGA (US)
HUANG HUAI (US)
XIE RUILONG (US)
CLEVENGER LAWRENCE (US)
Application Number:
PCT/CN2023/104034
Publication Date:
January 04, 2024
Filing Date:
June 29, 2023
Export Citation:
Assignee:
IBM (US)
IBM CHINA CO LTD (CN)
IBM CHINA CO LTD (CN)
International Classes:
H01L21/74; H01L23/528; H01L23/535
Foreign References:
| US20180294267A1 | 2018-10-11 | |||
| US20180019207A1 | 2018-01-18 | |||
| CN107026146A | 2017-08-08 | |||
| US20200098681A1 | 2020-03-26 | |||
| US20220157957A1 | 2022-05-19 |
Attorney, Agent or Firm:
ZHONGZI LAW OFFICE (CN)
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