HYBRID SILICON WAFER - JX NIPPON MINING & METALS CORP

Title:

HYBRID SILICON WAFER

Document Type and Number:

WIPO Patent Application WO/2011/055673

Kind Code:

A1

Abstract:

A hybrid silicon wafer which is a silicon wafer characterized by having a structure wherein the main plane direction of polycrystalline silicon, that is produced by the unidirectional solidification melt method, is (311) and monocrystalline silicon is embedded in said polycrystalline silicon. The aforesaid hybrid silicon wafer characterized in that the purity, excluding gas components, of the polycrystalline silicon part is 6N or greater, the total amount of metallic impurities is 1 wt ppm or less, and, among the metallic impurities, the amounts of Cu, Fe, Ni and Al are each 0.1 wt ppm or less. Thus, a hybrid silicon wafer having the functions of both a polycrystalline silicon wafer and a monocrystalline silicon wafer is provided and the occurrence of a polish bump between the polycrystalline silicon and the monocrystalline silicon and macro-sized peaks and valleys are prevented.

Inventors:

SUZUKI RYO (JP)
TAKAMURA HIROSHI (JP)

Application Number:

PCT/JP2010/069140

Publication Date:

May 12, 2011

Filing Date:

October 28, 2010

Export Citation:

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Assignee:

JX NIPPON MINING & METALS CORP (JP)
SUZUKI RYO (JP)
TAKAMURA HIROSHI (JP)

International Classes:

C30B29/06; C30B28/06; C30B33/06; H01L21/208

Domestic Patent References:

WO2010004863A1

2010-01-14

Foreign References:

JPH06283469A	1994-10-07
JP2008101277A	2008-05-01
JP3342898B2	2002-11-11
JP3819863B2	2006-09-13
JP2005132671A	2005-05-26
JP2008179988A	2008-08-07

Other References: