Title:
HYBRID SWITCH INCLUDING GAN HEMT AND MOSFET
Document Type and Number:
WIPO Patent Application WO/2018/015921
Kind Code:
A3
Abstract:
A hybrid switch apparatus includes a gate drive circuit producing a gate drive signal, a GaN high electron mobility transistor (HEMT) having a first gate, a first drain, and a first source. A silicon (Si) MOSFET has a second gate, a second drain, and a second source. The GaN HEMT and the Si MOSFET are connected in a parallel arrangement so that (i) the first drain and the second drain are electrically connected and (ii) the first source and the second source are electrically connected. The second gate is connected to the gate drive circuit output to receive the gate drive signal. A delay block has an input connected to the gate drive circuit output and an delay block output is configured to produce a delayed gate drive signal for driving the GaN HEMT.
Inventors:
LU JUNCHENG (US)
BAI HUA (US)
TENG HUI (US)
BAI HUA (US)
TENG HUI (US)
Application Number:
PCT/IB2017/054407
Publication Date:
March 01, 2018
Filing Date:
July 20, 2017
Export Citation:
Assignee:
HELLA GMBH & CO KGAA (DE)
International Classes:
H03K17/12; H03K17/284; H03K17/687
Domestic Patent References:
| WO2016014907A1 | 2016-01-28 |
Foreign References:
| US20120280728A1 | 2012-11-08 |
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