HYDRIDE ENHANCED GROWTH RATES IN HYDRIDE VAPOR PHASE EPITAXY

Title:

HYDRIDE ENHANCED GROWTH RATES IN HYDRIDE VAPOR PHASE EPITAXY

Document Type and Number:

WIPO Patent Application WO/2019/140445

Kind Code:

A2

Abstract:

Presented herein are reactors for growing or depositing semiconductor films or devices. The reactors disclosed may be used for the production of III-V materials grown by hydride vapor phase epitaxy (HVPE).

Inventors:

SCHULTE KEVIN LOUIS (US)
PTAK AARON JOSEPH (US)
SIMON JOHN DAVID (US)

Application Number:

PCT/US2019/013669

Publication Date:

July 18, 2019

Filing Date:

January 15, 2019

Export Citation:

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Assignee:

ALLIANCE SUSTAINABLE ENERGY (US)

International Classes:

H01L31/18

Other References:

See references of EP 3740306A4

Attorney, Agent or Firm:

BARKLEY, Sam J. (US)

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