Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
INTEGRATION OF LOW ELEMENT THIN FILMS AND Ta INTO Cu DAMASCENE
Document Type and Number:
WIPO Patent Application WO2002069395
Kind Code:
B1
Abstract:
New precursors and processes to generate fluorinated poly(para-xylylenes) ("PPX") and their chemically modified films suitable for fabrications of integrated circuit ("Ics") of <0.15 µm are disclosed. The films so prepared have low dielectric constants (" ELEMENT ") and are able to keep the integrity of the dielectric, Cu, and the barrier metal, such as Ta. Hence, the reliability of Ics can be assured.

Inventors:
LEE CHUNG J
Application Number:
PCT/US2002/005470
Publication Date:
July 08, 2004
Filing Date:
February 22, 2002
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
DIELECTRIC SYSTEMS INC (US)
International Classes:
C08G61/02; C08J5/18; C08L65/00; C08L65/04; (IPC1-7): H01L21/768; C08G61/02; H01L21/312
Download PDF: