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Patent Searching and Data


Title:
IGBT CHIP HAVING COMPOSITE GATE
Document Type and Number:
WIPO Patent Application WO/2019/157820
Kind Code:
A1
Abstract:
An IGBT chip having a composite gate comprises a plurality of composite gate units. Each of the composite gate units comprises a source region (3) and a gate region. The gate region comprises a planar gate region (1) and a trench gate region (2) respectively disposed at two sides of the source region (3). A planar gate and a trench gate are compositely disposed on the same cell (16), thereby greatly improving chip density while retaining the features of low power consumption and high current density of a trench gate and the wide safe operating area of a planar gate.

Inventors:
LIU GUOYOU (CN)
ZHU CHUNLIN (CN)
ZHU LIHENG (CN)
Application Number:
PCT/CN2018/106117
Publication Date:
August 22, 2019
Filing Date:
September 18, 2018
Export Citation:
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Assignee:
ZHUZHOU CRRC TIMES ELECTRIC CO LTD (CN)
International Classes:
H01L29/423; H01L29/739
Foreign References:
CN205621738U2016-10-05
CN105745758A2016-07-06
CN102945804A2013-02-27
US9419118B12016-08-16
CN108538910A2018-09-14
Attorney, Agent or Firm:
YUHONG INTELLECTUAL PROPERTY LAW FIRM (CN)
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