Title:
IGBT DEVICE AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2023/193370
Kind Code:
A1
Abstract:
Provided in the the embodiments of the present application is an IGBT device, which comprises an n-type semiconductor layer, wherein the following are formed in the n-type semiconductor layer: a p-type collector region; an n-type field cut-off region located on the p-type collector region; an n-type drift region located on the n-type field cut-off region; a plurality of trenches extending into the n-type drift region, each trench comprising a first trench at an upper portion and a second trench at a lower portion, and the width of the first trenches being greater than the width of the second trenches; p-type columns located in the second trenches; insulating dielectric layers located in the first trenches and located above the p-type columns; gate oxide layers and gate electrodes which are located in the first trenches and close to the side wall positions of the first trenches; p-type body regions located between the adjacent first trenches; n-type emitter regions located in the p-type body regions; and n-type charge storage regions located below the p-type body regions and between the adjacent trenches.
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Inventors:
FAN RANGXUAN (CN)
MIAO JINZHENG (CN)
WANG PENGFEI (CN)
LIU LEI (CN)
GONG YI (CN)
MIAO JINZHENG (CN)
WANG PENGFEI (CN)
LIU LEI (CN)
GONG YI (CN)
Application Number:
PCT/CN2022/107317
Publication Date:
October 12, 2023
Filing Date:
July 22, 2022
Export Citation:
Assignee:
SUZHOU ORIENTAL SEMICONDUCTOR CO LTD (CN)
International Classes:
H01L29/739; H01L21/331; H01L29/06
Foreign References:
| CN113838916A | 2021-12-24 | |||
| CN106653828A | 2017-05-10 | |||
| CN114242786A | 2022-03-25 | |||
| CN215377412U | 2021-12-31 | |||
| US20170194485A1 | 2017-07-06 |
Attorney, Agent or Firm:
BEYOND ATTORNEYS AT LAW (CN)
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