Title:
III-N DIODES WITH BURIED POLARIZATION LAYERS UNDERNEATH ANODES
Document Type and Number:
WIPO Patent Application WO/2019/139601
Kind Code:
A1
Abstract:
A III-N diode is disclosed. The diode includes a base layer of a III-N material and a stack of various materials provided over the base layer and including layers of a first polarization material provided over the base layer and a second polarization material provided over the first material and forming a heterojunction with the first material, and a cover layer provided over the second material, burying the polarization layers below the surface of the diode. An anode of the diode extends towards the base layer, with the bottom part of the anode interfacing the second material so that a portion of the second polarization material is underneath the anode. Carefully selecting the first and second materials can ensure that 2DEG is formed in the second material and, thereby, extends below the anode, advantageously improving coupling between the 2DEG and the anode and, thus, improving performance of the III-N diode.
Inventors:
GILES LUIS FELIPE (DE)
Application Number:
PCT/US2018/013419
Publication Date:
July 18, 2019
Filing Date:
January 12, 2018
Export Citation:
Assignee:
INTEL IP CORP (US)
International Classes:
H01L29/861; H01L29/66; H01L29/778
Foreign References:
| US20120267640A1 | 2012-10-25 | |||
| US20170301799A1 | 2017-10-19 | |||
| US20160225889A1 | 2016-08-04 | |||
| US20160086938A1 | 2016-03-24 | |||
| CN102903762A | 2013-01-30 |
Attorney, Agent or Firm:
HARTMANN, Natalya (US)
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