Title:
III-NITRIDE ENHANCEMENT HEMT AND PREPARATION METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2016/141762
Kind Code:
A1
Abstract:
An III-nitride enhancement HEMT and a preparation method therefor. The preparation method comprises: forming a heterostructure, mainly consisting of a second semiconductor used as a barrier layer and a first semiconductor used as a channel layer, in a growth manner on a substrate, wherein the second semiconductor is superimposed on the first semiconductor; forming a mask layer, double as a passivation layer, on the second semiconductor; etching a grid area of the mask layer until the second semiconductor is exposed; growing a p-type layer in the grid area of the mask layer, the p-type layer and the second semiconductor forming a PN junction; and setting a p-type gate on the p-type layer, and forming an ohmic contact or a Schottky contact between the p-type gate and the p-type layer. The process of the present invention greatly alleviates the implementation difficulty of a p-type gate technology, effectively solves the reliability problem of an enhancement HEMT device and effectively inhibits a current collapse effect, thereby greatly improving the working performance of the HEMT device, and realizing a real sense of enhancement HEMT.
Inventors:
SUN QIAN (CN)
ZHOU YU (CN)
LI SHUIMING (CN)
DAI SHUJUN (CN)
GAO HONGWEI (CN)
YANG HUI (CN)
ZHOU YU (CN)
LI SHUIMING (CN)
DAI SHUJUN (CN)
GAO HONGWEI (CN)
YANG HUI (CN)
Application Number:
PCT/CN2015/099170
Publication Date:
September 15, 2016
Filing Date:
December 28, 2015
Export Citation:
Assignee:
SUZHOU INST NANO TECH & NANO BIONICS CAS (CN)
International Classes:
H01L21/335; H01L21/28; H01L29/423; H01L29/778
Foreign References:
| CN102683394A | 2012-09-19 | |||
| CN102487080A | 2012-06-06 | |||
| US20140159048A1 | 2014-06-12 | |||
| US20130153921A1 | 2013-06-20 | |||
| US20130087803A1 | 2013-04-11 |
Attorney, Agent or Firm:
NANJING LI&FENG INTELLECTUAL PROPERTY AGENCY (SPECIAL GENERAL PARTNERSHIP) (CN)
南京利丰知识产权代理事务所（特殊普通合伙） (CN)
南京利丰知识产权代理事务所（特殊普通合伙） (CN)
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