Title:
III-V COMPOUND SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD FOR PRODUCING III-V COMPOUND SEMICONDUCTOR LIGHT-EMITTING ELEMENT
Document Type and Number:
WIPO Patent Application WO/2024/048538
Kind Code:
A1
Abstract:
Provided is a III-V compound semiconductor light-emitting element that has better light emission output with respect to injected power, as compared to conventional light-emitting elements. A III-V compound semiconductor light-emitting element according to the present invention has an n-type cladding layer, a light-emitting layer, and a p-type cladding layer in this order and has an undoped electron blocking layer between the light-emitting layer and the p-type cladding layer. The light-emitting layer has a laminated structure formed by repeatedly stacking barrier layers and well layers. In a conduction band, a band gap of the electron blocking layer is larger than a band gap of the barrier layer and a band gap of the p-type cladding layer, and a band gap of the p-type cladding layer is larger than a band gap of the barrier layer. In a valence band, the band gap of the electron blocking layer lies between the band gap of the barrier layer and the band gap of the cladding layer.
Inventors:
KOSHIKA YUTA (JP)
KADOWAKI YOSHITAKA (JP)
KADOWAKI YOSHITAKA (JP)
Application Number:
PCT/JP2023/031046
Publication Date:
March 07, 2024
Filing Date:
August 28, 2023
Export Citation:
Assignee:
DOWA ELECTRONICS MATERIALS CO (JP)
International Classes:
H01L33/30
Domestic Patent References:
| WO2021085340A1 | 2021-05-06 | |||
| WO2018003551A1 | 2018-01-04 |
Foreign References:
| US20100270531A1 | 2010-10-28 |
Attorney, Agent or Firm:
SUGIMURA Kenji (JP)
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