Title:
IMAGE CAPTURE ELEMENT, MANUFACTURING METHOD, AND ELECTRONIC DEVICE
Document Type and Number:
WIPO Patent Application WO/2018/131509
Kind Code:
A1
Abstract:
The present disclosure relates to an image capture element for capturing an image with improved image quality, a manufacturing method, and an electronic device. In an effective pixel region in which a plurality of pixels are arranged in a matrix, a plurality of microlenses are formed to collect light on a pixel by pixel basis. In an effective pixel peripheral region disposed so as to surround the outer side of the effective pixel region, a plurality of slit-type optical diffraction gratings are formed, with a longitudinal direction thereof extending in a direction orthogonal to a side direction of the effective pixel region. The microlenses and the slit-type optical diffraction gratings are coated with antireflection coating. The present technique may be applied in a CMOS image sensor, for example.
More Like This:
Inventors:
OOTSUKA YOICHI (JP)
Application Number:
PCT/JP2017/047264
Publication Date:
July 19, 2018
Filing Date:
December 28, 2017
Export Citation:
Assignee:
SONY SEMICONDUCTOR SOLUTIONS CORP (JP)
International Classes:
H01L27/146; G02B3/00; G02B5/18; H04N5/369
Foreign References:
JP2010212635A | 2010-09-24 | |||
JP2011146481A | 2011-07-28 | |||
JP2013012518A | 2013-01-17 | |||
JP2010186818A | 2010-08-26 | |||
JP2008287747A | 2008-11-27 | |||
US20120224263A1 | 2012-09-06 | |||
JP2014207253A | 2014-10-30 | |||
JP2008304855A | 2008-12-18 |
Attorney, Agent or Firm:
NISHIKAWA Takashi et al. (JP)
Download PDF:
Previous Patent: POLISHING COMPOSITION
Next Patent: SOLID-STATE IMAGE CAPTURING ELEMENT, AND ELECTRONIC DEVICE
Next Patent: SOLID-STATE IMAGE CAPTURING ELEMENT, AND ELECTRONIC DEVICE