Title:
IMAGE SENSOR BASED ON CHARGE CARRIER AVALANCHE
Document Type and Number:
WIPO Patent Application WO/2022/110097
Kind Code:
A1
Abstract:
Disclosed herein is an image sensor comprising: a plurality of avalanche photodiodes (APDs); wherein each of the APDs comprises a radiation absorption layer that comprises an absorption region and an amplification region; wherein the absorption region is configured to generate charge carriers therein from a particle of radiation absorbed by the radiation absorption layer; wherein the absorption region comprises an InGaAs layer sandwiched between InP layers; wherein the amplification region has an electric field therein, the electric field having a field strength sufficient to cause an avalanche of the charge carriers in the amplification region.
Inventors:
CAO PEIYAN (CN)
LIU YURUN (CN)
LIU YURUN (CN)
Application Number:
PCT/CN2020/132599
Publication Date:
June 02, 2022
Filing Date:
November 30, 2020
Export Citation:
Assignee:
SUZHOU XPECTSENSE TECH CO LTD (CN)
International Classes:
G01T1/36
Foreign References:
| CN111247455A | 2020-06-05 | |||
| CN102175727A | 2011-09-07 | |||
| CN110418981A | 2019-11-05 | |||
| JPH0380575A | 1991-04-05 |
Attorney, Agent or Firm:
BEIJING SUNHOPE INTELLECTUAL PROPERTY LTD. (CN)
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