IMAGING APPARATUS

WIPO Patent Application WO/1999/036754

A1

An imaging apparatus comprising an electron-bombardment multiplier which is provided with a built-in charge-transfer solid-state imaging device having a high resolution, a high sensitivity, an improved S/N ratio, and a prolonged life time, wherein as an imaging element, an electron-bombardment multiplier is used which includes a vacuum enclosure made up of an input surface plate (12), a ceramic side tube (16), and a ceramic stem (17) and containing a photocathode (13) capable of emitting photoelectrons from the opposite surface to the incident surface in response to light incidence and a back-incidence FT-CCD (11) provided with an incidence surface in the traveling path of photoelectrons emitted. The number of pixels in the vertical direction of an imaging section (11a) of the FT-CCD (11) is equal to or more than the number of output scanning lines. A negative voltage is always applied to the transfer electrode of the imaging section (11a) during the image storage period. Consequently, the dark current is suppressed, the S/N ratio is improved, the resolution is maintained, and the sensitivity is also improved.

JP5895232	Infrared detector
WO/2005/054798	IMPROVED OPTICAL RADIATION SENSOR SYSTEM

SUYAMA MOTOHIRO (JP)
EMA SHOGO (JP)
MARUNO TADASHI (JP)

PCT/JP1999/000134

July 22, 1999

January 18, 1999

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HAMAMATSU PHOTONICS KK (JP)
SUYAMA MOTOHIRO (JP)
EMA SHOGO (JP)
MARUNO TADASHI (JP)

G01J1/42; H01J31/26; H04N5/30; H04N5/335; H04N5/341; H04N5/361; H04N5/369; H04N5/3725; H04N5/378; (IPC1-7): G01J1/42

JPS6030059B2	1985-07-13
JPS58133748A	1983-08-09
US4963952A	1990-10-16
JPH10304256A	1998-11-13
JPS6030059B2	1985-07-13
US4963952A	1990-10-16

See also references of EP 1048939A4

Koizumi, Shin (6th floor 37-4, Yushima 3-chome Bunkyo-ku Tokyo, JP)

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