Title:
IMAGING ELEMENT, MULTILAYER IMAGING ELEMENT, AND SOLID-STATE IMAGING DEVICE
Document Type and Number:
WIPO Patent Application WO/2019/203222
Kind Code:
A1
Abstract:
This imaging element is provided with a photoelectric conversion part formed by layering a first electrode 21, a photoelectric conversion layer 23A, and a second electrode 22, wherein: an inorganic oxide semiconductor material layer 23B is formed between the first electrode 21 and the photoelectric conversion layer 23A; and the inorganic oxide semiconductor material layer 23B either contains gallium (Ga) atoms and tin (Sn) atoms or gallium (Ga) atoms and indium (In) atoms.
Inventors:
MORIWAKI TOSHIKI (JP)
NAKANO HIROSHI (JP)
NAKANO HIROSHI (JP)
Application Number:
PCT/JP2019/016292
Publication Date:
October 24, 2019
Filing Date:
April 16, 2019
Export Citation:
Assignee:
SONY CORP (JP)
International Classes:
H01L27/146; H01L31/10; H01L51/42; H04N5/369
Domestic Patent References:
| WO2017029877A1 | 2017-02-23 |
Foreign References:
| US20160037098A1 | 2016-02-04 | |||
| JP2007123698A | 2007-05-17 | |||
| JP2012049210A | 2012-03-08 | |||
| JP2016063165A | 2016-04-25 | |||
| JP2016063165A | 2016-04-25 | |||
| JP2011138927A | 2011-07-14 | |||
| JP2008177191A | 2008-07-31 |
Other References:
See also references of EP 3783652A4
Attorney, Agent or Firm:
YAMAMOTO Takahisa et al. (JP)
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