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Patent Searching and Data


Title:
IMPACT DETECTION AND RECORDING DEVICE
Document Type and Number:
WIPO Patent Application WO/2013/065493
Kind Code:
A1
Abstract:
Provided is an impact detection and recording device requiring no power supply and capable of detecting one-time impact and recording and holding the one-time impact. The impact detection and recording device comprises: a piezoelectric element (2) for converting impact energy into electric energy and outputting the electric energy; and a ferroelectric memory (3) having a ferroelectric material (4) connected to the piezoelectric element (2) and having one principal surface and the other principal surface opposing to the one principal surface, a first electrode (5) formed on the side of the one principal surface of the ferroelectric material (4), and a second electrode (8) formed on the side of the other principal surface of the ferroelectric material (4). The ferroelectric memory (3) can record at least one of the first and second states derived from electron polarization of the ferroelectric material (4). The capacitance-voltage characteristics of the ferroelectric memory (3) have a hysteresis. In the hysteresis curve of the capacitance-voltage characteristics, when the voltage value at which the largest difference in capacitance occurs between the curve when the voltage is increased and the curve when the voltage is decreased is defined as a threshold voltage (Vth), the threshold voltage (Vth) becomes greater than or less than zero.

Inventors:
HIROSE SAKYO (JP)
KONDO NOBUHIRO (JP)
KAWADA SHINICHIRO (JP)
HORIGUCHI CHIKAHIRO (JP)
Application Number:
JP2012/076908
Publication Date:
May 10, 2013
Filing Date:
October 18, 2012
Export Citation:
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Assignee:
MURATA MANUFACTURING CO., LTD. (10-1, Higashikotari 1-chome Nagaokakyo-sh, Kyoto 55, 〒6178555, JP)
International Classes:
G01P15/09; H01L21/8246; H01L27/105; H01L41/08
Foreign References:
JP2001201511A
JP2005345394A
JPH0290571A
JPH05291583A
JP2002520842A
Other References:
MINORU, NODA ET AL.: 'A Significant Improvement in Memory Retention of Metal-Ferroelectric- Insulator-Semiconductor Structure for One Transistor-Type Ferroelectric Memory by Rapid Thermal Annealing' JPN. J. APPL. PHYS. vol. 42, April 2003, pages 2055 - 2058
Attorney, Agent or Firm:
MIYAZAKI & METSUGI (Chuo Odori FN Bldg, 3-8 Tokiwamachi 1-chome, Chuo-ku, Osaka-sh, Osaka 28, 〒5400028, JP)
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Claims: