Title:
IMPLANTED VACANCY CENTERS WITH COHERENT OPTICAL PROPERTIES
Document Type and Number:
WIPO Patent Application WO/2017/136015
Kind Code:
A3
Abstract:
A structure comprises a plurality of deterministically positioned optically active defects, wherein each of the plurality of deterministically positioned optically active defects has a linewidth within a factor of one hundred of a lifetime limited linewidth of optical transitions of the plurality of deterministically positioned optically active defects, and wherein the plurality of deterministically positioned optically active defects has an inhomogeneous distribution of wavelengths, wherein at least half of the plurality of deterministically positioned optically active defects have transition wavelengths within a less than 8 nm range.
Inventors:
EVANS RUFFIN E (US)
SIPAHIGIL ALP (US)
LUKIN MIKHAIL D (US)
SIPAHIGIL ALP (US)
LUKIN MIKHAIL D (US)
Application Number:
PCT/US2016/062328
Publication Date:
October 19, 2017
Filing Date:
November 16, 2016
Export Citation:
Assignee:
HARVARD COLLEGE (US)
International Classes:
B82Y20/00; G01N21/63
Foreign References:
| US20140291490A1 | 2014-10-02 | |||
| US20150238125A1 | 2015-08-27 | |||
| US20150299894A1 | 2015-10-22 |
Other References:
WANG, C. ET AL.: "Single photon emission from SiV centres in diamond produced by ion implantation", J. PHYS. B: AT. MOL. OPT. PHYS., vol. 39, 5 December 2005 (2005-12-05), pages 37 - 41, XP020101365, Retrieved from the Internet [retrieved on 20170807]
EVANS, R.E. ET AL.: "Coherent optical emitters in diamond nanostructures via ion implantation", ARXIV:1512.03820V1, 11 December 2015 (2015-12-11), XP055434743, Retrieved from the Internet [retrieved on 20170807]
EVANS, R.E. ET AL.: "Coherent optical emitters in diamond nanostructures via ion implantation", ARXIV:1512.03820V1, 11 December 2015 (2015-12-11), XP055434743, Retrieved from the Internet
Attorney, Agent or Firm:
SCOZZAFAVA, Mary, Rose et al. (US)
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