Title:
IMPROVED EPI GROWTH UNIFORMITY WITH SOURCE/DRAIN PLACEHOLDER
Document Type and Number:
WIPO Patent Application WO/2024/060646
Kind Code:
A1
Abstract:
A semiconductor device includes a nanosheet stack on a substrate. A first source/drain is on a first side of the nanosheet stack and a second source/drain is on an opposing side of the nanosheet stack. A backside contact includes a first contact end on a first end of the first source/drain and an opposing second contact end in electrical communication with a backside power distribution network. A frontside contact includes a first contact end on a first end of the second source/drain and an opposing second contact end in electrical communication with a backend of line (BEOL) interconnect. A placeholder extends from an opposing second end of the second source/drain.
Inventors:
XIE RUILONG (US)
SCHMIDT DANIEL (US)
KANG TSUNG-SHENG (US)
REZNICEK ALEXANDER (US)
SCHMIDT DANIEL (US)
KANG TSUNG-SHENG (US)
REZNICEK ALEXANDER (US)
Application Number:
PCT/CN2023/094960
Publication Date:
March 28, 2024
Filing Date:
May 18, 2023
Export Citation:
Assignee:
IBM (US)
IBM CHINA CO LTD (CN)
IBM CHINA CO LTD (CN)
International Classes:
H01L29/10; H01L21/336; H01L21/768; H01L23/528; H01L29/66; H01L29/786
Foreign References:
| US20210376093A1 | 2021-12-02 | |||
| US20200075771A1 | 2020-03-05 | |||
| US20220238659A1 | 2022-07-28 | |||
| US10074571B1 | 2018-09-11 | |||
| US20210376094A1 | 2021-12-02 | |||
| US10692768B1 | 2020-06-23 | |||
| US20210408247A1 | 2021-12-30 | |||
| US20180366324A1 | 2018-12-20 |
Attorney, Agent or Firm:
CCPIT PATENT AND TRADEMARK LAW OFFICE (CN)
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