Title:
IMPROVED PROCESS FOR MANUFACTURING A CRYSTALLINE METAMATERIAL WITHIN A SILICON LIGHT-TO-ELECTRICITY CONVERTER
Document Type and Number:
WIPO Patent Application WO/2018/220447
Kind Code:
A3
Abstract:
The invention provides a solution through wide-beam, wide-spot, well-controlled ion- amorphization, which causes almost unidirectional crystal lattice agitations and minimizes lateral and multidirectional lattice vibrations at the origin of hard extended structural defects. The crystal lattice is not too deformed during the ion implantation shock remaining within technically acceptable limits. This is particularly useful in the case of devices with a large active surface area as light-to-electricity converters. The crystal damage and the energy expenditure of the post-implantation thermal treatment are significantly reduced opening the way to costly controlled industrial applications. This invention is preferably applicable in the field of new generation, high efficiency all-silicon light-to-electricity converters.
Inventors:
KUZNICKI ZBIGNIEW (FR)
Application Number:
PCT/IB2018/000914
Publication Date:
February 14, 2019
Filing Date:
May 24, 2018
Export Citation:
Assignee:
SEGTON ADVANCED TECH SAS (FR)
International Classes:
H01L31/068; H01L31/0352; H01L31/0384; H01L31/18; H01L31/20; H01L21/265; H01L31/0376
Foreign References:
| FR3005789A1 | 2014-11-21 | |||
| FR2722612A1 | 1996-01-19 | |||
| JPS57132373A | 1982-08-16 |
Other References:
KUZNICKI Z T: "A silicon-based metamaterial for light-to-electricity conversion", SPIE ECO-PHOTONICS 2011: SUSTAINABLE DESIGN, MANUFACTURING, AND ENGINEERING WORKFORCE EDUCATION FOR A GREEN FUTURE, SPIE, 1000 20TH ST. BELLINGHAM WA 98225-6705 USA, vol. 8065, no. 1, 13 April 2011 (2011-04-13), pages 80650D-1 - 80650D-2, XP060009575, DOI: 10.1117/12.889254
KUZNICKI Z T ET AL: "ACTIVE NANOSTRUCTURE FOR PHOTOVOLTAIC APPLICATION CREATED BY ION IMPLANTATION", 17TH. E.C. PHOTOVOLTAIC SOLAR ENERGY CONFERENCE. MUNICH, GERMANY, OCT. 22 - 26, 2001; [PROCEEDINGS OF THE INTERNATIONAL PHOTOVOLTAIC SOLAR ENERGY CONFERENCE], MUNICH : WIP-RENEWABLE ENERGIES, DE, vol. CONF. 17, 22 October 2001 (2001-10-22), pages 323 - 327, XP001139433, ISBN: 978-3-936338-08-9
SCHLEMM H ED - ISHIDIDA E ET AL: "Compact broad beam ion implantation of 25 keV N/sup +/ in silicon", ION IMPLANTATION TECHNOLOGY. PROCEEDINGS OF THE 11TH INTERNATIONAL CON FERENCE ON AUSTIN, TX, USA 16-21 JUNE 1, NEW YORK, NY, USA,IEEE, US, 16 June 1996 (1996-06-16), pages 400 - 403, XP010220694, ISBN: 978-0-7803-3289-8
MYAKON'KIKH A V ET AL: "Photovoltaic effect in a structure based on amorphous and nanoporous silicon formed by plasma immersion ion implantation", RUSSIAN MICROELECTRONICS, NEW YORK, NY, US, vol. 42, no. 4, 13 July 2013 (2013-07-13), pages 246 - 252, XP035348288, ISSN: 1063-7397, [retrieved on 20130713], DOI: 10.1134/S1063739713040033
KUZNICKI Z T ET AL: "ACTIVE NANOSTRUCTURE FOR PHOTOVOLTAIC APPLICATION CREATED BY ION IMPLANTATION", 17TH. E.C. PHOTOVOLTAIC SOLAR ENERGY CONFERENCE. MUNICH, GERMANY, OCT. 22 - 26, 2001; [PROCEEDINGS OF THE INTERNATIONAL PHOTOVOLTAIC SOLAR ENERGY CONFERENCE], MUNICH : WIP-RENEWABLE ENERGIES, DE, vol. CONF. 17, 22 October 2001 (2001-10-22), pages 323 - 327, XP001139433, ISBN: 978-3-936338-08-9
SCHLEMM H ED - ISHIDIDA E ET AL: "Compact broad beam ion implantation of 25 keV N/sup +/ in silicon", ION IMPLANTATION TECHNOLOGY. PROCEEDINGS OF THE 11TH INTERNATIONAL CON FERENCE ON AUSTIN, TX, USA 16-21 JUNE 1, NEW YORK, NY, USA,IEEE, US, 16 June 1996 (1996-06-16), pages 400 - 403, XP010220694, ISBN: 978-0-7803-3289-8
MYAKON'KIKH A V ET AL: "Photovoltaic effect in a structure based on amorphous and nanoporous silicon formed by plasma immersion ion implantation", RUSSIAN MICROELECTRONICS, NEW YORK, NY, US, vol. 42, no. 4, 13 July 2013 (2013-07-13), pages 246 - 252, XP035348288, ISSN: 1063-7397, [retrieved on 20130713], DOI: 10.1134/S1063739713040033
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