Title:
IMPURITY-DOPED DIAMOND
Document Type and Number:
WIPO Patent Application WO/2018/016403
Kind Code:
A1
Abstract:
Provided is an impurity-doped diamond in which the deviation between the crystal lattice constant and a theoretical value according to Vegard's law is extremely small and the electrical resistance value is small despite the impurity-doped diamond containing a high concentration of impurities. The impurity-doped diamond is obtained by doping a diamond with impurities, the impurity concentration as measured by secondary ion mass spectrometry is in the range of 5×1020 cm-3 to 1×1022 cm-3 inclusive, and the deviation of the crystal lattice distortion (Δa/a) as calculated on the basis of X-ray structure analysis using formula (1) from the crystal lattice distortion according to Vegard's law is within 100 ppm. Formula (1): crystal lattice distortion (Δa/a) = (adoped-aref)/aref×100 (%) (in the formula, adoped is the lattice constant of the impurity-doped diamond and aref is the lattice constant (3.567 Å) of a standard diamond sample).
Inventors:
OHMAGARI SHINYA (JP)
UMEZAWA HITOSHI (JP)
YAMADA HIDEAKI (JP)
CHAYAHARA AKIYOSHI (JP)
MOKUNO YOSHIAKI (JP)
UMEZAWA HITOSHI (JP)
YAMADA HIDEAKI (JP)
CHAYAHARA AKIYOSHI (JP)
MOKUNO YOSHIAKI (JP)
Application Number:
PCT/JP2017/025472
Publication Date:
January 25, 2018
Filing Date:
July 13, 2017
Export Citation:
Assignee:
AIST (JP)
International Classes:
C30B29/04; C01B32/25; C23C16/27; H01L21/205
Domestic Patent References:
| WO2004104272A1 | 2004-12-02 |
Foreign References:
| JP2004031022A | 2004-01-29 | |||
| JP2004538230A | 2004-12-24 |
Attorney, Agent or Firm:
TANAKA, Junya et al. (JP)
Download PDF: