Title:
IN-GA-ZN-O TYPE SPUTTERING TARGET
Document Type and Number:
WIPO Patent Application WO/2011/061923
Kind Code:
A1
Abstract:
A sputtering target formed of an oxide sinter which contains In, Ga and Zn and comprises a structure containing In in a larger amount than the surrounding structures and a structure containing Ga and Zn in a larger amount than the surrounding structures.
Inventors:
YANO, Koki (1280, Kamiizumi Sodegaura-sh, Chiba 93, 〒2990293, JP)
矢野公規 (〒93 千葉県袖ヶ浦市上泉１２８０番地 Chiba, 〒2990293, JP)
矢野公規 (〒93 千葉県袖ヶ浦市上泉１２８０番地 Chiba, 〒2990293, JP)
Application Number:
JP2010/006714
Publication Date:
May 26, 2011
Filing Date:
November 16, 2010
Export Citation:
Assignee:
IDEMITSU KOSAN CO.,LTD. (1-1 Marunouchi 3-chome, Chiyoda-ku Tokyo, 21, 〒1008321, JP)
出光興産株式会社 (〒21 東京都千代田区丸の内三丁目１番１号 Tokyo, 〒1008321, JP)
YANO, Koki (1280, Kamiizumi Sodegaura-sh, Chiba 93, 〒2990293, JP)
出光興産株式会社 (〒21 東京都千代田区丸の内三丁目１番１号 Tokyo, 〒1008321, JP)
YANO, Koki (1280, Kamiizumi Sodegaura-sh, Chiba 93, 〒2990293, JP)
International Classes:
C23C14/34; C04B35/00; C23C14/08; H01L21/28; H01L21/285; H01L21/363
Attorney, Agent or Firm:
WATANABE, Kihei et al. (Shibashin Kanda Bldg. 3rd Floor, 26 Kanda Suda-cho 1-chome, Chiyoda-k, Tokyo 41, 〒1010041, JP)