Title:
IN-SITU DRY CLEANING METHOD AND APPARATUS
Document Type and Number:
WIPO Patent Application WO/2019/059621
Kind Code:
A1
Abstract:
The present invention relates to a dry cleansing method for removing an oxide or nitride formed on a silicon substrate, the method comprising: a reaction product producing step of providing a silicon substrate heated in a state disposed within a chamber with a reaction gas reactive to the silicon oxide or the silicon nitride to convert at least portion of the silicon oxide or the silicon nitride into hexafluorosilicate ammonium ((NH4)2SiF6); and a reaction product removing step of providing the silicon substrate having hexafluorosilicate ammonium formed thereon with heated heat-transfer gas to remove the hexafluorosilicate ammonium. According to the present invention, processes of forming and removing hexafluorosilicate ammonium in order to remove silicon oxide or silicon nitride formed on a substrate can be performed in one chamber and thus can improve productivity and hardware stability.
Inventors:
KIM IN-JUN (KR)
LEE GIL-GWANG (KR)
PARK JAE-YANG (KR)
LIM DOO-HO (KR)
LEE GIL-GWANG (KR)
PARK JAE-YANG (KR)
LIM DOO-HO (KR)
Application Number:
PCT/KR2018/011010
Publication Date:
March 28, 2019
Filing Date:
September 19, 2018
Export Citation:
Assignee:
MUJIN ELECTRONICS CO LTD (KR)
International Classes:
H01L21/02; H01J37/32; H01L21/324; H01L21/67
Foreign References:
| KR20150109288A | 2015-10-01 | |||
| KR20070044081A | 2007-04-27 | |||
| KR20100078953A | 2010-07-08 | |||
| KR20080037565A | 2008-04-30 | |||
| JP2004119417A | 2004-04-15 |
Attorney, Agent or Firm:
DARAE IP FIRM (KR)
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