BACKGROUND

Field

[0001] Embodiments of the present disclosure generally relate to a system and methods used in semiconductor device manufacturing. More specifically, embodiments provided herein generally include an apparatus and methods for measuring an electric field generated in a plasma processing chamber for diagnostic and control of a generated plasma formed in the plasma processing chamber purposes.

Description of the Related Art

[0002] Reliably producing high aspect ratio features is one of the key technology challenges for the next generation of semiconductor devices. One method of forming high aspect ratio features uses a plasma assisted etching process, such as a reactive ion etch (RIE) plasma process, to form high aspect ratio openings in a material layer, such as a dielectric layer, of a substrate. In a typical RIE plasma process, a plasma is formed in a processing chamber and ions from the plasma are accelerated towards a surface of a substrate to form openings in a material layer disposed beneath a mask layer formed on the surface of the substrate.

[0003] A typical Reactive Ion Etch (RIE) plasma processing chamber includes a radio frequency (RF) bias generator, which supplies an RF voltage to a power electrode, such as a metal plate positioned adjacent to an “electrostatic chuck” (ESC) assembly, more commonly referred to as the “cathode”. The power electrode can be capacitively coupled to the plasma of a processing system through a thick layer of dielectric material (e.g., ceramic material), which is a part of the ESC assembly. In a capacitively coupled gas discharge, the plasma is created by using a radio frequency (RF) generator that is coupled to the power electrode, or a separate power electrode that is disposed outside of the ESC assembly and within the processing chamber, through an RF matching network (“RF match”) that tunes the apparent load to 50Q to minimize the reflected power and maximize the power delivery efficiency. The application of RF voltage to the power electrode causes an electron-repelling plasma sheath to form over a processing surface of a substrate that is positioned on a substrate supporting surface of the ESC assembly during processing. The non-linear, diode-like nature of the plasma sheath results in rectification of the applied RF field, such that a direct-current (DC) voltage drop, or “self-bias”, appears between the substrate and the plasma, making the substrate potential negative with respect to the plasma potential. This voltage drop determines the average energy of the plasma ions accelerated towards the substrate, and thus etch anisotropically. More specifically, ion directionality, the feature profile, and etch selectivity to the mask and the stop-layer are controlled by the Ion Energy Distribution Function (IEDF). In plasmas with RF bias, the IEDF typically has two non-discrete peaks, one at a low energy and one at a high energy, and an ion population that has a range of energies that extend between the two peaks. The presence of the ion population in-between the two peaks of the IEDF is reflective of the fact that the voltage drop between the substrate and the plasma oscillates at the RF bias frequency. When a lower frequency RF bias generator is used to achieve higher self-bias voltages, the difference in energy between these two peaks can lead to process related issues, such as bowing of an etched feature walls formed on a surface of the substrate. Compared to the high-energy ions, the low-energy ions are less effective at reaching the corners at the bottom of the etched feature (e.g., due to the charging effect), but cause less sputtering of the mask material. This is important in high aspect ratio etch applications, such as hard-mask opening or dielectric mold etch. As feature sizes continue to diminish and the aspect ratio increases, while feature profile control requirements become more stringent, it becomes more desirable to have a well- controlled substrate bias and thus IEDF at the substrate surface during processing.

[0004] It has been found that conventional RF plasma-assisted etching processes, which only deliver sinusoidal waveform containing RF signals at conventional plasma generating biasing levels to one or more of the electrodes in a plasma processing chamber, do not adequately or desirably control the sheath properties and generated ion energies, which leads to undesirable plasma processing results. The undesirable processing results can include excessive sputtering of the mask layer and the generation of sidewall defects in high-aspect ratio features.

[0005] Moreover, substrate potential, or the self-bias created during plasma processing, is a critical parameter for assuring controllable and desirable plasma processing results. The determination of the substrate potential during plasma processing of a substrate can be used to improve the plasma processing results achieved on the substrate and subsequent substrates processed in the processing chamber. For example, the determination of the substrate potential in real time can be used to better control the actual bias voltage established at the substrate due to the capacitive coupling of a waveform applied to an adjacently positioned biasing electrode and compensate for any drift in the substrate potential due to changes in the processing environment. In other examples, the determination of the substrate potential can be used for plasma process diagnostics and optimization, and for electrostatic chucking and de-chucking control of the substrate during plasma processing. Conventionally, the potential of a substrate can only be inferred by use of an empirical model or experimentally measured by use of a wired non-production worthy dummy substrate or experimental probe using an offline non-production worthy diagnostic process testing method. Thus, using conventional processes, a direct realtime measurement substrate potential and real-time control of the substrate potential based on the measurement during the plasma processing of a semiconductor device containing production substrate is not possible.

[0006] Thus, there is a need in the art for plasma processing devices and biasing methods that are at least able to resolve the issues outlined above.

SUMMARY

[0007] Embodiments of the disclosure include an electric field measurement system. The electric field measurement system also includes a first light source configured to transmit electromagnetic energy at one or more wavelengths; a first light sensor configured to receive the electromagnetic energy transmitted at the one or more wavelengths. The system also includes at least one electro-optic sensor, that may include: a package may include a body; a first electro-optic crystal disposed within the body; and at least one optical fiber configured to transmit the electromagnetic energy transmitted from the first light source to a surface of the first electro-optic crystal; and transmit at least a portion of the electromagnetic energy that was transmitted to the surface of the first electro-optic crystal and subsequently passed through at least a portion of the first electro-optic crystal to the first light sensor, where the first light sensor is configured to generate a signal that varies based on an attribute of the portion of the electromagnetic energy received by the first light sensor from the at least one optical fiber. The system also includes a controller configured to receive the generated signal from the first light sensor and generate a command signal based on the received signal. Other embodiments of this aspect include corresponding computer systems, apparatus, and computer programs recorded on one or more computer storage devices, each configured to perform the actions of the methods.

[0008] Embodiments of the disclosure may further include a method of performing an electric field measurement using an electric field measurement system detecting, by use of a first electro-optic sensor, an electric field generated by a first component, where the first electro-optic sensor may include: a package may include a body; a first electro-optic crystal disposed within the body and positioned so that the generated electric field passes through at least a portion of the first electro-optic crystal; and at least one optical fiber. The method also includes transmitting, by use of a first light source, electromagnetic energy through the at least one optical fiber to a surface of the first electro-optic crystal while the electric field generated by a first component. The method also includes transmitting at least a portion of the electromagnetic energy, which was transmitted to the surface of the first electro-optic crystal and subsequently passed through at least a portion of the first electro-optic crystal, through the at least one optical fiber to a first light sensor. The method also includes generating, by the first light sensor, a first measurement signal that varies based on an attribute of the portion of the electromagnetic energy received by the first light sensor from the at least one optical fiber. The method also includes generating, by a controller, a command signal based on the generated first measurement signal, where the command signal is configured to provide information that is used to adjust a setting of a processing parameter of a plasma process performed in a plasma processing chamber. Other embodiments of this aspect include corresponding computer systems, apparatus, and computer programs recorded on one or more computer storage devices, each configured to perform the actions of the methods.

[0009] Embodiments of the disclosure include a method of performing an electric field measurement using an electric field measurement system. The method comprising detecting, by use of a first electro-optic sensor, an electric field generated by a first component, wherein the first electro-optic sensor comprises: a package comprising a body; a first electro-optic crystal disposed within the body and positioned so that the generated electric field passes through at least a portion of the first electrooptic crystal; and at least one optical fiber. The method also includes transmitting, by use of a first light source, electromagnetic energy through the at least one optical fiber to a surface of the first electro-optic crystal while the electric field generated by a first component; transmitting at least a portion of the electromagnetic energy, which was transmitted to the surface of the first electro-optic crystal and subsequently passed through at least a portion of the first electro-optic crystal, through the at least one optical fiber to a first light sensor; generating, by the first light sensor, a first measurement signal that varies based on an attribute of the portion of the electromagnetic energy received by the first light sensor from the at least one optical fiber; and generating, by a controller, a command signal based on the generated first measurement signal, wherein the command signal is configured to provide information that is used to adjust a setting of a processing parameter of a plasma process performed in a plasma processing chamber.

[0010] Embodiments of the disclosure include an electric field measurement system. The electric field measurement system may include a first light source configured to transmit electromagnetic energy at one or more wavelengths, a first light sensor configured to receive the electromagnetic energy transmitted at the one or more wavelengths, at least one electro-optic sensor, and a controller. The at least one electro-optic sensor may include a package comprising a body, a first electrooptic crystal disposed within the body; and at least one optical fiber. The optical fiber is configured to transmit the electromagnetic energy transmitted from the first light source to a surface of the first electro-optic crystal, and transmit at least a portion of the electromagnetic energy that was transmitted to the surface of the first electro-optic crystal and subsequently passed through at least a portion of the first electro-optic crystal to the first light sensor, wherein the first light sensor is configured to generate a signal that varies based on an attribute of the portion of the electromagnetic energy received by the first light sensor from the at least one optical fiber. The controller is configured to receive the generated signal from the first light sensor and generate a command signal based on the received signal. BRIEF DESCRIPTION OF THE DRAWINGS

[0011] So that the manner in which the above recited features of the present disclosure can be understood in detail, a more particular description of the disclosure, briefly summarized above, may be had by reference to embodiments, some of which are illustrated in the appended drawings. It is to be noted, however, that the appended drawings illustrate only exemplary embodiments and are therefore not to be considered limiting of its scope, and may admit to other equally effective embodiments.

[0012] Figure 1 is a schematic cross-sectional view of a processing system configured to practice the methods set forth herein, according to one or more embodiments.

[0013] Figure 2 is a schematic view of a portion of a signal detection assembly, according to one embodiment.

[0014] Figure 3A is a top isometric view of a sensing assembly that includes a signal detection assembly, according to one or more embodiments.

[0015] Figure 3B is a side cross-sectional view of the sensing assembly illustrated in Figure 3A, according to one embodiment.

[0016] Figure 3C is a side cross-sectional view of an alternate version of the sensing assembly illustrated in Figure 3A, according to one embodiment, according to an embodiment.

[0017] Figure 3D is a side cross-sectional view of a sensing assembly, according to one embodiment.

[0018] Figure 4 is a diagram illustrating a method for real-time wafer potential measurement in a plasma processing system, according to one embodiment.

[0019] To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements that are common to the figures. It is contemplated that elements and features of one embodiment may be beneficially incorporated in other embodiments without further recitation. DETAILED DESCRIPTION

[0020] Embodiments of the present disclosure generally relate to a system used in semiconductor device manufacturing. More specifically, embodiments provided herein generally include apparatus and methods for measuring and controlling in realtime a potential formed on a substrate or plasma generating component disposed within a plasma processing chamber during processing. The measured potential can be used for plasma process monitoring, device calibration, process and device performance diagnostics, process chamber design optimization, and to improve the safety of a plasma processing chamber.

[0021] It has been found that electro-optic (EO) effect sensing devices that include EO sensing elements (e.g., EO crystal) provide a significant advantage over other conventional techniques used to detect generated potentials in one or more regions of a plasma processing chamber. Typical conventional measurement technics require circuit containing devices and conductive elements that typically alter and/or interfere with various electromagnetic fields generated in a plasma processing chamber during processing. The electromagnetic fields are typically generated due to the delivery of radio frequency (RF) and/or pulsed direct current (DC) voltage signals used to generate and control a plasma formed in a processing region of a processing chamber during operation. Figure 1 is an example of a plasma processing system 10 and controller 126 that are configured to perform a plasma processing method. Figure 2 is a simplified schematic of a signal detection assembly 225 that forms part of a sensing assembly 184 that can be positioned in a region of the plasma processing system 10 to sense the electric field strength E so that a generated voltage (V) within the region can then be determined (i.e., electric field E = -dV/ds, where “s” is the distance across which the field extends) and used to control one or more aspects of the plasma process. The signal detection assembly 225 includes a laser 210 and a photodetector 211 that are optically coupled to the one or more the fiber optic sensors 250 (e.g., a crystal) by use of one or more optical fibers. The one or more optical fibers can include a first optical fiber 213 and a second optical fiber 214. The laser 210 is coupled to the fiber optic sensor 250 via the first fiber optic cable 213. The fiber optic sensor 250 is coupled to the photodetector 211 via the second fiber optic cable 214. When the fiber optic sensor 250 is positioned between a first electrode 203 and a second electrode 204, the fiber optic sensor can be used to detect an electric field formed between the first electrode 203 and second electrode 204. The fiber optic sensor 250 includes an electro-optic (EO) effect sensing element, such as an electrooptic crystal 290, that is configured to detect a magnitude of the electric field E that passes there through, such as the electric field E created between the first electrode 203 and the second electrode 204 during plasma processing. In one embodiment, the electro-optic (EO) effect sensing element includes a crystal that uses Pockel’s effect in which the birefringence of the crystal changes in proportion to the electric field applied to the optical crystal within the fiber optic sensor 250. In some embodiments, the electro-optic crystal 290 comprises a crystalline material, such as, for example, a crystal that includes lithium niobate (LiNbOs), LiTaOs, potassium dihydrogen phosphate (KDP) and its isomorphs, beta-barium borate (BBO), lll-V semiconductors or other non-centrosym metric media such as electric-field poled polymers or glasses. Any change in the electric field will result in a change in a characteristic of light received by the photodetector 211 , due to the effect the change in the electric field has on EO effect sensing element and the laser 210 generated light passing there through. In some embodiments, the laser 210 is configured to deliver a light at a wavelength between about 200 and 14000 nanometers (nm). Values associated with the change in the characteristic of the light received by the photodetector 211 can subsequently be relayed to the controller 126 to determine the electric potential or voltage formed between the electric field generating elements in the region of the plasma processing system 10 in which the fiber optic sensor 250 is positioned.

[0022] However, it has been found that electric field strength measurements made by most EO effect sensor designs are temperature dependent and also dependent on the orientation of the sensing crystal to the orientation of the generated electric field lines. Therefore, embodiments of the disclosure provided herein, are configured compensate for these additional measurement variables. Figures 3A and 3B illustrate an embodiment of a sensing assembly 184 that includes a detector assembly 301 that includes a plurality of fiber optic sensors 250, such as a first fiber optic sensor 320 and a second fiber optic sensor 321 that are mounted within a package 310. The package 310 includes a body that may include a dielectric material that is able to support and retain each of the plurality of fiber optic sensors 250, and in some embodiments the body can include a ceramic material, polymeric material or other material that will not interfere with the operation of the fiber optic sensors and not significantly degrade when exposed to high temperatures, electric fields or the plasma processing environment. In one embodiment, the first fiber optic sensor 320 includes a pair of optical fibers 341 and 342 that each are in optical communication with a surface of an electro-optic crystal 290 at one end of the optical fibers and in optical communication with a first optical detection assembly 350A at the other end of the optical fibers. Similarly, the second fiber optic sensor 321 includes a pair of optical fibers 343 and 344 that each are in optical communication with a surface of an electrooptic crystal 290 at one end of the optical fibers and in optical communication with a second optical detection assembly 350B at the other end of the optical fibers. The optical fibers 341 , 342 and 343, 344 are each disposed in a supporting sleeve 311 that extends between a surface of the body of the package 310 and the optical detection assembly 350A, 350B, and are used to protect the optical fibers from the external environment and from becoming damaged during installation and/or use. The sleeves 311 can be further protected by the use of ceramic beads, flexible metal tubes, or other useful materials that can provide chemical and thermal insulation and/or resistance to components they are exposed to during processing.

[0023] During operation an optical emission assembly 351 within an optical detection assembly 350 includes a laser 210 that is configured to deliver electromagnetic radiation (e.g., coherent light) to an input optical fiber 341 , 343 that transmits the generated radiation to and through the electro-optic crystal 290, which, in some configurations, reflects and/or returns a significant portion of the generated radiation to the output optical fiber 342, 344 that then transmits the generated radiation to an optical detector 352 that is configured to detect aspects (e.g., intensity, polarization, etc.) of the received radiation and transmits information relating to the detected aspects of the received radiation to the controller 126. The optical detector 352 is configured to receive the electromagnetic radiation provided from the optical emission assembly 351 and then provide a signal that includes information relating to the detected aspects of the received electromagnetic radiation. The optical detector 352 can include an optoelectronic device such as a photoelectric effect type sensor (e.g., photodiode, photomultiplier tube), photoconductive type sensor, a photorefractive effect type sensor, or other useful device that is configured to convert electromagnetic energy into a signal that can be used by the controller 126. The controller 126 can then use the signal received from the optical detector 352 and generate a command signal to control some aspect of a process being performed in the processing chamber 100 or control the usage of a piece of hardware in the processing chamber 100. The controller 126 will generally analyze and use the information provided in the signal received from the optical detector 352 to monitor an aspect of the plasma process, help calibrate and/or improve the performance of one or more processing chamber components, optimize the processing chamber design, and to assure that the plasma processing chamber is safe, as will be discussed further below. The analysis performed by the controller 126 can include a comparison of the information provided in the signal and system configuration data that is stored in memory of the controller 126. The system configuration data can include benchmark data that was previously generated from prior process runs and/or user defined threshold values that are defined to assure portions of the processing chamber are functioning correctly.

[0024] As illustrated in Figures 3A and 3B, the first fiber optic sensor 320 and the second fiber optic sensor 321 are spaced a distance apart in a direction (e.g., X- direction) so that each of the electro-optic crystals 290 within each fiber optic sensor 250 is able to detect different portions of the electric field E that passes through the various components within the detector assembly 301 during processing. In general, it is desirable for the surfaces 325, 326 of the first fiber optic sensor 320 and the second fiber optic sensor 321 , respectively, to be oriented at a desired orientation relative to the generated electric field E. In one example, the surfaces 325, 326 of the first fiber optic sensor 320 and the second fiber optic sensor 321 , which may be aligned with features within the electro-optic crystals 290 (e.g., crystal planes), are oriented perpendicular to the predominant electric field E line direction (e.g., Z- direction). In some embodiments, it is desirable for a detector assembly 301 to include three or more fiber optic sensors 250. In one example, a package 310 includes a first fiber optic sensor 320, a second fiber optic sensor 321 , and a third fiber optic sensor (not shown) that are oriented to separately measure an electric field E in three different orthogonal directions, such that each main surface (e.g., surface 325, 326) of each fiber optic sensor is oriented perpendicular to a different one of the X, Y and Z coordinate directions.

[0025] In an effort to compensate for temperature drift or variation in the measured electric field strength, and thus measured voltage, the measurement results provided in the signal received from the optical detector 352 by the controller 126 can be adjusted by use of fiber optic sensor calibration data that is stored in memory of the controller 126. In one embodiment, the effect of temperature on the measurement results from each of the fiber optic sensors 320, 321 can be stored in the form of a time variant formula or as data in a lookup table that was created based a known processing sequence. In one example, the variation in the optical properties of the electro-optic crystals 290 are collected and stored in memory for multiple standard plasma processing sequences performed in a first plasma processing chamber, and the stored data is used in subsequent plasma processing sequences to help adjust the measurements made in a similarly configured second plasma processing chamber that is running one of the multiple standard plasma processing sequences. In another embodiment, the effect of a temperature change on the measurement results can be determined by synchronizing the halting or cessation of the delivery of an electric field producing signal to an electrode, radio frequency (RF) coil or E-field generating element for a brief period of time to allow the fiber optic sensors 250 to collect at least one measurement without the electric field E being present so that a change in the optical properties of the electro-optic crystals 290 can be collected by comparing a measurement taken during the cessation of the electric field E versus a prior measurement taken when the electric field E also wasn’t present. In one example, the optical properties of the electro-optic crystals 290 are measured at one or more intervals when the generated electric field E is stopped and compared with the optical properties of the electro-optic crystal 290 performed at some time prior to the beginning of the plasma process. In one process example, an optical detector 352 is adapted to in real time provide a measurement signal to the controller 126, wherein the measurement signal includes a first portion, in which an electric field is sensed by a fiber optic sensor 250, and a second portion, in which no electric field is sensed by the fiber optic sensor 250, thus allowing the effect of temperature to be determined by comparing the two portions of the measurement signal. In either of these cases, the temperature effect compensation factors determined from the use of the formula, data in the lookup table or by a comparison of measurements taken at different times can then be used to adjust the optical data collected by one or more of the fiber optic sensors to improve the accuracy of the derived voltage measurements.

[0026] Figure 3C illustrates an embodiment of a sensing assembly 184 that includes a detector assembly 301 that includes at least one fiber optic sensors 250 that is configured to detect a variation in the electric field (i.e., first fiber optic sensor 320) and at least one fiber optic sensors 250 (i.e., second fiber optic sensor 321 ) that is similarly configured but is shielded from the electric field E by use of a shielding element 360. The shielding element 360 can include a conductive layer (e.g., metal layer) that is sized and positioned within the body of the package 310 so as to act as a Faraday shield for the shielded fiber optic sensors. In this configuration, due to the proximity of the two fiber optic sensors 250 and their thermal coupling to each other due to their position within the package 310, the measured optical properties of the electro-optic crystal 290 within the shielded fiber optic sensor, which is substantially unaffected by the presence of the electric field E passing through the body of the package 310, can be used as a baseline value to adjust the measurements made by the other fiber optic sensor that is exposed to the electric field E. In one example, the measured baseline value measured by the shielded second fiber optic sensor 321 can be subtracted from the measurements made by the first fiber optic sensor 320 to thus remove the effect that a change in temperature has on its measurement results.

[0027] Figure 3D illustrates an embodiment of a sensing assembly 184 that includes a detector assembly 301 that includes at least one fiber optic sensors 250 that is configured to detect a variation in the electric field (i.e., first fiber optic sensor 320) and at least one optical temperature measurement assembly 370 that is configured to measure the temperature of the electro-optic crystal 290 while the fiber optic sensor 250 is taking electric field E measurements. The optical temperature measurement assembly 370 can include an optical fiber 371 that is positioned to collect radiation emitted from the electro-optic crystal 290 at one end and transfer the collected electromagnetic radiation to detector disposed within an optical detection assembly 372 positioned at an opposing end. In this case, the temperature measurement signal generated by the electronics in the optical detection assembly 372 due to the received radiation emitted from a surface 327 of the electro-optic crystal 290 can be delivered to the controller 126 so that the measurements collected by the fiber optic sensors 250 can be adjusted based on prior calibration data stored in memory to compensate for the variation in temperature of the electro-optic crystal 290. Conventional optical temperature measurement assemblies are available from Omega Engineering, Inc. of Norwalk, CT USA, or Advanced Energy Inc. of Fort Collins, CO USA that are configured to measure in a desired temperature range in which the electro-optic crystal 290 is exposed to during processing.

[0028] In some alternate embodiments, a temperature sensor that is external to the detector assembly 301 , and not affected by the electric field E (e.g., optical temperature sensor probe), may be used. In this case a temperature signal generated by an external temperature sensor is sent to the controller 126 for processing and E field compensation.

Measurement Apparatus and Processing Methods

[0029] As discussed above, a sensing assembly 184, for example, includes a detector assembly 301 that includes a package 310 that includes one or more fiber optic sensors 250 and an optical detection assembly 350A that is optically coupled to a fiber optic sensor 250 via the optical fibers 341 , 342. Referring back to Figure 1 , each sensing assembly 184 is communicatively coupled to the controller 126 via communication line 165. The controller 126 can then use the received output signal received from each of the optical detection assemblies to display a result or measurement performed by the fiber optic sensors 250 and/or control some part of the processing chamber 100 during processing. As explained in further detail below, the processing chamber 100 can include one or more sensing assemblies 184 that are positioned to detect an electric field, and thus the generated voltage in a region of the processing chamber 100, and provide feedback to the controller 126. Changes in a sensing parameter detected by a fiber optic sensor 250 are transmitted from the sensing assembly 184 to the controller 126. The controller 126 can then subsequently use the input received from the sensing assembly 184 to alter one or more plasma processing variables, such as altering a characteristic of an RF signal or pulsed voltage (PV) waveform generated by a PV waveform generator 175, and/or the amount of current provided from a current source 177 to the bias electrode 104 within the processing chamber 100.

[0030] Figure 1 is a schematic cross-sectional view of the plasma processing system 10 which can be configured to perform one or more of the plasma processing methods. In some embodiments, the plasma processing system 10 is configured for plasma-assisted etching processes, such as a reactive ion etch (RIE) plasma processing. The plasma processing system 10 can also be used in other plasma- assisted processes, such as plasma-enhanced deposition processes (for example, plasma-enhanced chemical vapor deposition (PECVD) processes, plasma-enhanced physical vapor deposition (PEPVD) processes, plasma-enhanced atomic layer deposition (PEALD) processes, plasma treatment processing, plasma-based ion implant processing, or plasma doping (PLAD) processing. In one configuration, as shown in Figure 1 , the plasma processing system 10 is configured to form a capacitively coupled plasma (CCP). However, in some embodiments, a plasma may alternately be generated by an inductively coupled source disposed over the processing region of the plasma processing system 10. In this configuration, a RF coil may be placed on top of a ceramic lid (vacuum boundary) of the plasma processing system 10.

[0031] The plasma processing system 10 includes the processing chamber 100, a substrate support assembly 136, a gas system 182, a DC power system 183, an RF power system 189, one or more sensing assemblies 184, and a controller 126. The processing chamber 100 includes a chamber body 113 that comprises a chamber lid 123, one or more sidewalls 122, and a chamber base 124. The chamber lid 123, one or more sidewalls 122, and the chamber base 124 collectively define the processing volume 129. The one or more sidewalls 122 and chamber base 124 generally include materials (such as aluminum, aluminum alloys, or stainless steel alloys) that are sized and shaped to form the structural support for the elements of the processing chamber 100 and are configured to withstand the pressures and added energy applied to them while a plasma 101 is generated within a vacuum environment maintained in the processing volume 129 of the processing chamber 100 during processing. A substrate 103 is loaded into, and removed from, the processing volume 129 through an opening (not shown) in one of the sidewalls 122. The opening is sealed with a slit valve (not shown) during plasma processing of the substrate 103. A gas system 182, which is coupled to the processing volume 129 of the processing chamber 100, includes a processing gas source 119 and a gas inlet 128 disposed through the chamber lid 123. The gas inlet 128 is configured to deliver one or more processing gases to the processing volume 129 from the plurality of processing gas sources 119.

[0032] The processing chamber 100 further includes a chamber lid 123, RF coil 181 and a lower electrode (e.g., a substrate support assembly 136) disposed in a processing volume 129. The chamber lid 123 and lower electrode are positioned to face each other. As seen in Figure 1 , in one embodiment, a radio frequency (RF) source 171 is electrically coupled to the lower electrode. The RF source 171 is configured to deliver an RF signal to ignite and maintain a plasma (e.g., the plasma 101 ) between the upper and lower electrodes. In some alternative configurations, the RF source can also be electrically coupled to the upper electrode. For example, the RF source can be electrically coupled to the chamber lid. In another example, the RF source could also be electrically coupled to the substrate support base 107.

[0033] The substrate support assembly 136 includes a substrate support 105, a substrate support base 107, an insulator plate 111 , a ground plate 112, a plurality of lift pins 186, and a bias electrode 104. Each of the lift pins 186 are disposed through a through hole 185 formed in the substrate support assembly 136 and are used to facilitate the transfer of a substrate 103 to and from a substrate support surface 105A of the substrate support 105. The substrate support 105 is formed of a dielectric material. The dielectric material can include a bulk sintered ceramic material, a corrosion-resistant metal oxide (for example, aluminum oxide (AI2O3), titanium oxide (TiO), yttrium oxide (Y2O3), a metal nitride material (for example, aluminum nitride (AIN), titanium nitride (TiN)), mixtures thereof, or combinations thereof.

[0034] The substrate support base 107 is formed of a conductive material (for example aluminum, an aluminum alloy, or a stainless steel alloy). The substrate support base 107 is electrically isolated from the chamber base 124 by the insulator plate 111 , and the ground plate 112 interposed between the insulator plate 111 and the chamber base 124. In some embodiments, the substrate support base 107 is configured to regulate the temperature of both the substrate support 105, and the substrate 103 disposed on the substrate support 105 during substrate processing. In some embodiments, the substrate support 105 includes a heater (not shown) to heat the substrate support 105 and substrate 103 disposed on the substrate support 105.

[0035] A bias electrode 104 is embedded in the dielectric material of the substrate support 105. Typically, the bias electrode 104 is formed of one or more electrically conductive parts. The electrically conductive parts typically include meshes, foils, plates, or combinations thereof. Here, the bias electrode 104 functions as a chucking pole (i.e., electrostatic chucking electrode) that is used to secure (e.g., electrostatically chuck) the substrate 103 to the substrate support surface 105A of the substrate support 105. In general, a parallel plate like structure is formed by the bias electrode 104 and a layer of the dielectric material that is disposed between the bias electrode 104 and the substrate supporting surface 105A. The dielectric material can typically have an effective capacitance CE of between about 5 nF and about 50 nF. Typically, the layer of dielectric material (e.g., aluminum nitride (AIN), aluminum oxide (AI2O3), etc.) has a thickness between about 0.05 mm and about 5 mm, such as between about 0.1 mm and about 3 mm, such as between about 0.1 mm and about 1 mm, or even between about 0.1 mm and 0.5 mm. The bias electrode 104 is electrically coupled to a clamping network, which provides a chucking voltage thereto. The clamping network includes a DC voltage supply 173 (e.g., a high voltage DC supply) that is coupled to a filter 178A of the filter assembly 178 that is disposed between the DC voltage supply 173 and bias electrode 104. In one example, the filter 178A is a low-pass filter that is configured to block RF frequency and pulsed voltage (PV) waveform signals provided by other biasing components found within the processing chamber 100 from reaching the DC voltage supply 173 during plasma processing. In one configuration, the static DC voltage is between about -5000V and about 5000V, and is delivered using an electrical conductor (such as a coaxial power delivery line 160).

[0036] In some configurations, the substrate support assembly 136, further includes an edge control electrode 115. The edge control electrode 115 is formed of one or more electrically conductive parts. The electrically conductive parts typically include meshes, foils, plates, or combinations thereof. The edge control electrode 115 is positioned below the edge ring 114 and surrounds the bias electrode 104 and/or is disposed a distance from a center of the bias electrode 104. In general, for a processing chamber 100 that is configured to process circular substrates, the edge control electrode 115 is annular in shape, is made from a conductive material, and is configured to surround at least a portion of the bias electrode 104. As seen in Figure 1 , the edge control electrode 115 is positioned within a region of the substrate support 105, and is biased by use of a pulsed voltage (PV) waveform generator 175.

[0037] The DC power system 183 includes the DC voltage supply 173, the pulsed voltage (PV) waveform generator 175, and a current source 177. The RF power system 189 includes a radio frequency (RF) waveform generator 171 , match 172, and a filter 174. As previously mentioned, the DC voltage supply 173 provides a constant chucking voltage, while the RF waveform generator 171 delivers an RF signal to the processing region, and the PV waveform generator 175 establishes a PV waveform at the bias electrode 104. Applying a sufficient amount of RF power to an electrode, such as the substrate support base 107, cause the plasma 101 to be formed in the processing region 129 of the processing chamber 100. In one configuration, the RF waveform has a frequency range between about 1 MHz and about 200 MHz.

[0038] In some embodiments, the power system 183 further includes a filter assembly 178 to electrically isolate one or more of the components contained within the power system 183. As shown in Figure 1 , a power delivery line 163 electrically connects the output of the RF waveform generator 171 to an impedance matching circuit 172, an RF filter 174 and substrate support base 107. Power delivery line 160 electrically connects the output of the voltage supply 173 to a filter assembly 178. Power delivery line 161 electrically connects the output of the PV waveform generator 175 to the filter assembly 178. Power delivery line 162 connects the output of the current source 177 to the filter assembly 178. In some embodiments, the current source 177 is selectively coupled to the bias electrode 104 by use of a switch (not shown) disposed in the delivery line 162, so as to allow the current source 177 to deliver a desired current to the bias electrode 104 during one or more stages (e.g., ion current stage) of the voltage waveform generated by the PV waveform generator 175. In one example, the voltage waveform provided from the PV waveform generator 175 can include a plurality of asymmetric voltage pulses that have a peak voltage range between ±5000 volts, a pulse on-time that is between 10% and 90% of the asymmetric voltage pulse period, and be delivered at a pulse repetition frequency that is between 100 kHz and 500 kHz. As seen in Figure 1 , the filter assembly 178, which can include multiple separate filtering components (i.e., discrete filters 178A-178C) that are each electrically coupled to the output node via power delivery line 164. The power delivery lines 160-164 include electrical conductors that include a combination of coaxial cables, such as a flexible coaxial cable that is connected in series with a rigid coaxial cable, an insulated high-voltage corona-resistant hookup wire, a bare wire, a metal rod, an electrical connector, of any combination of the above.

[0039] The controller 126, also referred to herein as a processing chamber controller, includes a central processing unit (CPU) 133, a memory 134, and support circuits 135. The controller 126 is used to control the process sequence used to process the substrate 103. The CPU is a general-purpose computer processor configured for use in an industrial setting for controlling the processing chamber and sub-processors related thereto. The memory 134 described herein, which is generally non-volatile memory, can include random access memory, read-only memory, hard disk drive, or other suitable forms of digital storage, local or remote. The support circuits 135 are conventionally coupled to the CPU 133 and comprises cache, clock circuits, input/output subsystems, power supplies, and the like, and combinations thereof. Software instructions (program) and data can be coded and stored within the memory 134 for instructing a processor within the CPU 133. A software program (or computer instructions) readable by CPU 133 in the controller 126 determines which tasks are performable by the components in the plasma processing system 10.

[0040] Typically, the program, which is readable by the CPU 133 in the controller 126 includes code, which, when executed by the CPU 133, performs tasks relating to the plasma processing schemes described herein. The program may include instructions that are used to control the various hardware and electrical components within the plasma processing system 10 to perform the various process tasks and various process sequences used to implement the methods described herein. In one embodiment, the program includes instructions that are used to perform one or more of the operations described below in relation to Figure 4. [0041] The controller 126 is in communication with the pulse voltage (PV) waveform generator 175 and the radio frequency (RF) waveform generator 171 so that one or more command signals provided from the controller 126 can be used to control aspects of the output signal (e.g., waveform characteristics) provided from the pulse voltage (PV) waveform generator or the radio frequency (RF) waveform generator during processing.

Processing Method Examples

[0042] Figure 4 is a diagram illustrating a method for real-time wafer potential measurement of a substrate or plasma generating component disposed within a plasma processing chamber. The method 400 includes generating a plasma in a processing region of a processing chamber, monitoring an electrical characteristic of a sensor disposed within a detector assembly 301 within a sensing assembly 184, forming a set of adjustment parameters based on the electrical characteristic, and adjusting one or more plasma processing parameters based on the monitored electrical characteristic of the sensor. Prior to performing method 400, one or more detector assemblies 301 , and thus the one or more of the fiber optic sensors 250 disposed within the body of a package 310 of each detector assemblies 301 , are positioned and aligned within one or more of the regions of the processing chamber 100 to detect a portion of an electric field formed therein.

[0043] At activity 402, the method 400 includes forming a plasma 101 in the processing chamber 100 at least partially due to the delivery of an RF signal, provided from the RF waveform generator 171 of the RF power system 189, to an electrode within the processing chamber 100. In some embodiments of activity 402, an asymmetric voltage waveform is also provided from the PV waveform generator 175 to an electrode (e.g., bias electrode 104) disposed within the processing chamber 100.

[0044] At activity 404, the method 900 includes measuring one or more sensing parameters based on a measurement collected by one or more sensors disposed within the processing chamber 100. The one or more sensing parameters can include one or more of an electric field strength measured by a fiber optic sensor 250, a change in optical properties of the electro-optic crystal 290, and in some cases can also include a temperature measurement provide by a temperature sensor. In some embodiments, the sensing parameter includes the real time measurement of the generated electric field E within a region of the processing chamber 100 by use of one or more of the one or more fiber optic sensors 250 within a sensing assembly 184. Activity 404 can include the measurement of an electric field E generated in a region of the RF coil 181 (Figurel ) so as to detect an area of the RF coil 181 that includes an electric field E that is higher or lower than expected and thus may be prone to arcing or plasma non-uniformity. The measurements relating to the region of the RF coil 181 that is being measured are relayed to the controller 126 via the communication line 165 for analysis. Prior to the measurements made during activity 404, the detector assembly 301 , and thus the one or more of the fiber optic sensors 250 disposed within the body of the package 310, are position and aligned so that a surface (e.g., surface 325, 326 shown in Figure 3A) of the one or more fiber optic sensors 250 are aligned in an desired orientation to detect the electric field E generated by a region of the RF coil 181 .

[0045] Additionally or alternately, during activity 404 a measurement of an electric field E generated in a region of the RF match 172 or filter assembly 178 is performed so as to detect an area of the RF match 172 or filter assembly 178 that includes an electric field E that is higher or lower than expected. The regions of that contain higher or lower electric fields may be prone to generating arcs or be signal that the electric field generating component is susceptible to premature failure. The measurements relating to the region of the RF match 172 and/or filter assembly 178 that are being measured during processing are relayed to the controller 126 via the communication line 165 for analysis. It is believed that the detection of electric fields generated by various electrical components within the RF match 172 and filter assembly 178, such as fixed or variable inductors, variable capacitors, and grounding elements (e.g., ground straps) that are out of a desired range can be useful to prevent any of these electrical components from causing variations in process results or damage to portions of the processing chamber 100.

[0046] Additionally or alternately, during activity 404 a measurement of an electric field E generated in the processing region 129 of the processing chamber 100 is performed by use of a moveable probe assembly (not shown) that is configured to be adjustably positioned within different areas of the processing region of the processing chamber 100 during plasma processing by use of an articulating arm (not shown) that is attached to a wall of the processing chamber 100. The moveable probe assembly can be used to map the electric field E generated in various regions of the processing chamber 100. The mapped electric fields can then be used to adjust the electrical power or properties of the electrical signals delivered to the plasma generating components, and/or even physically adjust the plasma generating components, to alter the plasma uniformity and/or prevent arcing or other undesirable attribute of the processing chamber design.

[0047] Additionally or alternately, during activity 404 a measurement of an electric field E generated at a surface of a substrate 103 is performed by use of an instrumented substrate. The instrumented substrate includes one or more detector assemblies 301 that are aligned, oriented and distributed in an array across a surface of the substrate so as to detect the amount of generated electric field E in each of the areas of the substrate surface to determine the amount of plasma non-uniform ity and/or skew in the plasma density formed over different regions of the substrate surface. Referring to Figure 1 , in some embodiments, the supporting sleeves 311 and their associated optical fibers are connected to a vacuum compatible connector 137 that is configured to transfer the optical signals passing between portions of the optical fibers that are inside and outside of the processing chamber and between the fiber optic sensors 250 and the optical detection assemblies 350. The measurements relating to the electric fields E within the various regions of the substrate surface that are being measured are relayed to the controller 126 via the communication line 165 for analysis.

[0048] In some alternate configurations, measurement of an electric field E generated at a surface of a substrate 103 is performed by use of an array of fiber optic sensors 250 (not shown) that are aligned, oriented and embedded within the substrate support 105, such as in a region between the bias electrode 104 and the substrate supporting surface 105A. In this configuration, the supporting sleeves 311 and their associated optical fibers can be positioned to exit the bottom of the substrate support assembly 136 so that they can be connected to their associated optical detection assemblies 350 that are configured to deliver a signal to the controller 126. [0049] At activity 406, the method 400 includes monitoring and analyzing a change in the sensing parameter detected by one or more fiber optic sensors 250 and other sensing elements (e.g., optical temperature measurement assembly 370) within one or more of the sensing assemblies 184. During activity 406, the controller 126 compares the data received from the one or more fiber optic sensors 250 and other sensing elements with information stored in memory of the controller 126 or other received sensor data to determine the desired amount of correction that is needed to compensate for a drift in temperature experienced by the one or more fiber optic sensors 250. The stored information may include equations or a look-up table that are configured to provide the amount of correction based on the data received by controller 126 that relates to the variation in temperature by use of one of the techniques described above. In one example, the sensing parameter is the change in electric field strength over time between points when no electric field E is present in the region of processing chamber 100. In another example, the sensing parameter is determined by a difference in the electric field E detected by a first fiber optic sensor 320 and a second fiber optic sensor 321 that is shielded from the electric field E by use of a shielding element 360. The controller 126 subsequently analyzes and uses the data received over time to determine an amount of adjustment that is required to electric field E measurement to correct for the variation in temperature.

[0050] At activity 408, the controller 126 then uses the determined amount of adjustment and resulting adjusted measurement data to generate a command signal that is used to adjust one or more plasma processing parameter based on the adjusted measurement. Plasma processing parameters can include any plasma processing variable that will affect a process result seen on substrate during or after plasma processing, and can include, but is not limited to, RF power level provided from an RF source, PV power level provided from an PV source, the act of halting the plasma process, gas flow rate, process chamber pressure, and substrate temperature. In one example, the controller 126 determines that an adjusted set of measurement data provided from a detector assembly 301 is higher than expected, due to a comparison of the adjusted measurement data and stored system configuration data, and then generates a command signal that is used to halt the processes being performed in the processing chamber due to a likelihood that arcing will occur in the processing chamber. In some embodiments of activity 408, the controller may also calculate an adjusted voltage measurement based the determined adjusted electric field E measurement and display information relating to the measurement on a graphical user interface (GUI) or store the result in memory for later use. In one example, the controller 126 determines that an adjusted set of measurement data provided from a detector assembly 301 within a region of the plasma processing chamber is higher or lower than expected, due to a comparison of the adjusted measurement data and stored system configuration data, and then generates a command signal that is used to provide information to a user that the electric field E in the region of the chamber is out of a desired range and thus one or more chamber components may need to adjusted, serviced or replaced.

[0051] Embodiments of the present disclosure described herein can be used to measure and control in real-time a potential formed on a substrate or plasma generating component disposed within a plasma processing chamber during processing. As noted herein, the measured potential can be used for plasma process monitoring, device calibration, process and device performance diagnostics, process chamber design optimization, and to improve the safety of a plasma processing chamber.

[0052] While the forgoing is directed to embodiments of the present disclosure, other and further embodiments of the disclosure may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.