IN-SITU PASSIVATION METHODS TO IMPROVE PERFORMANCE OF POLYSILICON DIODE

Title:

IN-SITU PASSIVATION METHODS TO IMPROVE PERFORMANCE OF POLYSILICON DIODE

Document Type and Number:

WIPO Patent Application WO/2011/085054

Kind Code:

A3

Abstract:

A nonvolatile memory cell including a storage element in series with a diode steering element. At least one interface of the diode steering element is passivated.

Inventors:

CHEN XIYING (US)
HOU KUN (US)
PAN CHUANBIN (US)
BANDYOPADHYAY ABHIJIT (US)
CHEN YUNG-TIN (US)

Application Number:

PCT/US2011/020293

Publication Date:

August 13, 2015

Filing Date:

January 06, 2011

Export Citation:

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Assignee:

SANDISK 3D LLC (US)
CHEN XIYING (US)
HOU KUN (US)
PAN CHUANBIN (US)
BANDYOPADHYAY ABHIJIT (US)
CHEN YUNG-TIN (US)

International Classes:

H01L27/102; H01L27/24; H01L29/66; H01L29/861; H01L45/00; G11C13/00

Domestic Patent References:

WO2003034498A1

2003-04-24

Foreign References:

US6034882A	2000-03-07
US20090168491A1	2009-07-02

Other References:

STRASS A ET AL: "Low temperature electrical surface passivation of MBE-grown pin diodes by hydrogen and oxygen plasma processes", THIN SOLID FILMS, ELSEVIER-SEQUOIA S.A. LAUSANNE, CH, vol. 321, no. 1-2, 26 May 1998 (1998-05-26), pages 261 - 264, XP004147931, ISSN: 0040-6090, DOI: 10.1016/S0040-6090(98)00484-2
"Hydrogen passivation of visible p-i-n type thin-film light-emitting diodes", APPLIED PHYSICS LETTERS, AIP, AMERICAN INSTITUTE OF PHYSICS, MELVILLE, NY, US, vol. 68, no. 8, 19 February 1996 (1996-02-19), pages 1031 - 1033, XP012015853, ISSN: 0003-6951, DOI: 10.1063/1.116238

Attorney, Agent or Firm:

RADOMSKY, Leon et al. (PLLC11800 Sunrise Valley Drive,Suite 100, Reston VA, US)

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