Title:
IN-SITU PROCESS CHAMBER PREPARATION METHODS FOR PLASMA ION IMPLANTATION SYSTEMS
Document Type and Number:
WIPO Patent Application WO2005114692
Kind Code:
A9
Abstract:
A method for plasma ion implantation of a substrate includes providing a plasma ion implantation system including a process chamber, a source for producing a plasma in the process chamber, a platen for holding the substrate in the process chamber, and a voltage source for accelerating ions from the plasma into the substrate, depositing on interior surfaces of the process chamber a fresh coating that is similar in composition to a deposited film that results from plasma ion implantation of the substrate, before depositing the fresh coating, cleaning interior surfaces of the process chamber by removing an old film using one or more activated cleaning precursors, plasma ion implantation of the substrate according to a plasma ion implantation process, and repeating the steps of cleaning interior surfaces of the process chamber and depositing a fresh coating following plasma ion implantation of one or more substrates.
Inventors:
SINGH VIKRAM (US)
GUPTA ATUL (US)
PERSING HAROLD M (US)
WALTHER STEVEN R (US)
TESTONI ANNE L (US)
GUPTA ATUL (US)
PERSING HAROLD M (US)
WALTHER STEVEN R (US)
TESTONI ANNE L (US)
Application Number:
PCT/US2005/017699
Publication Date:
January 19, 2006
Filing Date:
May 19, 2005
Export Citation:
Assignee:
VARIAN SEMICONDUCTOR EQUIPMENT (US)
SINGH VIKRAM (US)
GUPTA ATUL (US)
PERSING HAROLD M (US)
WALTHER STEVEN R (US)
TESTONI ANNE L (US)
SINGH VIKRAM (US)
GUPTA ATUL (US)
PERSING HAROLD M (US)
WALTHER STEVEN R (US)
TESTONI ANNE L (US)
International Classes:
H01J37/32; (IPC1-7): H01J37/32
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