InGaN LED PUMPED II-VI SEMICONDUCTOR LASER

WIPO Patent Application WO2006041619

A3

An optically pumped semiconductor laser (20) in accordance with the present invention includes a II-VI semiconductor laser chip (22). A plurality of InGaN LEDs (50) provides optical pump light for optically pumping the laser chip (22). An optical arrangement (52, 56) collects the pump light from the LEDs (50) and directs the pump light to light-concentrating optical device (44) that is either directly or indirectly in optical contact with the laser chip (22) and is arranged to concentrate the pump light (54C) on the chip (22) with maximized numerical aperture (NA). In one example of the laser, the light-concentrating device (44) is an immersion lens. In another example of the laser, the light-concentrating device is a tapered light-pipe.

JP2004282008	ORGANIC VERTICAL CAVITY LASER DEVICE HAVING ORGANIC ACTIVE REGION
WO/2017/141682	THERMO-OPTICAL CONVERSION ELEMENT AND THERMOELECTRIC CONVERSION ELEMENT
JPH07154030	LIGHT EMITTING ELEMENT

GOVORKOV SERGEI V (US)
SPINELLI LUIS A (US)

PCT/US2005/033441

July 27, 2006

September 16, 2005

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COHERENT INC (US)
GOVORKOV SERGEI V (US)
SPINELLI LUIS A (US)

H01S5/04; G02B19/00; H01S5/327

WO1997048138A2

1997-12-18

US5513204A	1996-04-30
US20040047270A1	2004-03-11
US6365237B1	2002-04-02
US6137625A	2000-10-24
US6068383A	2000-05-30
DE10059455A1	2002-06-06
US5859814A	1999-01-12

SEDOVA I V ET AL: "Lasing in Cd(Zn)Se/ZnMgSSe Heterostructures Pumped by Nitrogen and InGaN/GaN Lasers", SEMICONDUCTORS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 38, no. 9, September 2004 (2004-09-01), pages 1099 - 1100, XP002348135, ISSN: 1063-7826
PATENT ABSTRACTS OF JAPAN vol. 018, no. 187 (P - 1720) 30 March 1994 (1994-03-30)

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